|
This article is cited in 1 scientific paper (total in 1 paper)
Semiconductor structures, low-dimensional systems, quantum phenomena
Plasmon enhancement of the electric field in mid-infrared Ge/Si quantum-dot photodetectors with different thicknesses of the active region
A. A. Bloshkinab, A. I. Yakimova, A. V. Dvurechenskiiab a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
Abstract:
The spatial distribution of the electric field in Ge/Si photodetector heterostructures coated with a gold film containing a regular two-dimensional array of subwavelength apertures is calculated by the finite-element method. The array period and aperture diameter are 1.2 and 0.7 $\mu$m, respectively. The efficiency of field enhancement is determined for different thicknesses of the active region occupied by quantum dots. It is demonstrated that the field-enhancement factor for an electromagnetic wave incident on the structure from the side of the substrate is $\sim$3.5 times larger than that for a wave incident from the opposite side. In the first case, the field-enhancement factor varies nonmonotonically with the thickness of the active region.
Received: 01.08.2018 Revised: 13.08.2018
Citation:
A. A. Bloshkin, A. I. Yakimov, A. V. Dvurechenskii, “Plasmon enhancement of the electric field in mid-infrared Ge/Si quantum-dot photodetectors with different thicknesses of the active region”, Fizika i Tekhnika Poluprovodnikov, 53:2 (2019), 206–210; Semiconductors, 53:2 (2019), 195–199
Linking options:
https://www.mathnet.ru/eng/phts5587 https://www.mathnet.ru/eng/phts/v53/i2/p206
|
Statistics & downloads: |
Abstract page: | 31 | Full-text PDF : | 6 |
|