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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
B. A. Andreev, D. N. Lobanov, L. V. Krasil’nikova, K. E. Kudryavtsev, A. V. Novikov, P. A. Yunin, M. A. Kalinnikov, E. V. Skorokhodov, M. V. Shaleev, Z. F. Krasil'nik, “Features of the structural and optical properties of InGaN layers obtained by the MBE PA method with a pulsed supply of metal flows”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 766–772   |
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2020 |
| 2. |
A. N. Yablonskii, A. V. Novikov, M. V. Stepikhova, S. M. Sergeev, N. A. Baidakova, M. V. Shaleev, Z. F. Krasil'nik, “Kinetics of the luminescence response of self-assembled Ge(Si) nanoislands embedded in two-dimensional photonic crystals”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1150–1157 ; Semiconductors, 54:10 (2020), 1352–1359 |
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| 3. |
D. V. Yurasov, A. V. Novikov, S. A. Dyakov, M. V. Stepikhova, A. N. Yablonskii, S. M. Sergeev, D. E. Utkin, Z. F. Krasil'nik, “Enhancement of the luminescence signal from self-assembled Ge(Si) nanoislands due to interaction with the modes of two-dimensional photonic crystals”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 822–829 ; Semiconductors, 54:8 (2020), 975–981 |
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2019 |
| 4. |
B. A. Andreev, D. N. Lobanov, L. V. Krasil’nikova, P. A. Bushuikin, A. N. Yablonskii, A. V. Novikov, V. Yu. Davydov, P. A. Yunin, M. I. Kalinnikov, E. V. Skorokhodov, Z. F. Krasil'nik, “Emission properties of heavily doped epitaxial indium-nitride layers”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1395–1400 ; Semiconductors, 53:10 (2019), 1357–1362 |
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| 5. |
A. V. Novikov, D. V. Yurasov, N. A. Baidakova, P. A. Bushuikin, B. A. Andreev, P. A. Yunin, M. N. Drozdov, A. N. Yablonskii, M. A. Kalinnikov, Z. F. Krasil'nik, “Comparative analysis of luminescence properties of Ge : Sb layers grown on Ge(001) and Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1354–1359 ; Semiconductors, 53:10 (2019), 1318–1323 |
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2018 |
| 6. |
N. V. Baidus, V. Ya. Aleshkin, A. A. Dubinov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, D. G. Reunov, M. V. Shaleev, P. A. Yunin, D. V. Yurasov, “On the application of strain-compensating GaAsP layers for the growth of InGaAs/GaAs quantum-well laser heterostructures emitting at wavelengths above 1100 nm on artificial Ge/Si substrates”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1443–1446 ; Semiconductors, 52:12 (2018), 1547–1550 |
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| 7. |
K. E. Kudryavtsev, A. A. Dubinov, V. Ya. Aleshkin, D. V. Yurasov, P. V. Gorlachuk, Yu. L. Ryaboshtan, A. A. Marmalyuk, A. V. Novikov, Z. F. Krasil'nik, “Stimulated emission in the 1.3–1.5 $\mu$m spectral range from AlGaInAs quantum wells in hybrid light-emitting III–V heterostructures on silicon substrates”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1384–1389 ; Semiconductors, 52:11 (2018), 1495–1499 |
| 8. |
V. Ya. Aleshkin, N. V. Baidus, O. V. Vikhrova, A. A. Dubinov, B. N. Zvonkov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, I. V. Samartsev, D. V. Yurasov, “Stimulated emission at 1.3-$\mu$m wavelength in metamorphic InGaAs/InGaAsP structure with quantum wells grown on Ge/Si (001) substrate”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:16 (2018), 67–74 ; Tech. Phys. Lett., 44:8 (2018), 735–738 |
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2017 |
| 9. |
N. V. Baidus, V. Ya. Aleshkin, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, D. A. Pavlov, A. V. Rykov, A. A. Sushkov, M. V. Shaleev, P. A. Yunin, D. V. Yurasov, A. N. Yablonskii, Z. F. Krasil'nik, “Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1579–1582 ; Semiconductors, 51:11 (2017), 1527–1530 |
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| 10. |
V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, I. V. Samartsev, A. G. Fefelov, D. V. Yurasov, Z. F. Krasil'nik, “Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1530–1533 ; Semiconductors, 51:11 (2017), 1477–1480 |
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| 11. |
V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, Z. F. Krasil'nik, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, D. V. Yurasov, A. N. Yablonskii, “On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 695–698 ; Semiconductors, 51:5 (2017), 663–666 |
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2016 |
| 12. |
V. Ya. Aleshkin, L. V. Gavrilenko, D. M. Gaponova, Z. F. Krasil'nik, D. I. Kryzhkov, “The exciton excitations and relaxation processes in low-dimensional semiconductor heterostructures with quantum wells”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1720–1724 ; Semiconductors, 50:12 (2016), 1691–1695 |
| 13. |
N. A. Baidakova, A. V. Novikov, M. V. Shaleev, D. V. Yurasov, E. E. Morozova, D. V. Shengurov, Z. F. Krasil'nik, “Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1685–1689 ; Semiconductors, 50:12 (2016), 1657–1661 |
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| 14. |
V. B. Shmagin, S. N. Vdovichev, E. E. Morozova, A. V. Novikov, M. V. Shaleev, D. V. Shengurov, Z. F. Krasil'nik, “Electroluminescence from MIS silicon-based light emitters with arrays of self-assembled Ge(Si) nanoislands”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1497–1500 ; Semiconductors, 50:11 (2016), 1475–1478 |
| 15. |
A. N. Yablonskii, S. V. Morozov, D. M. Gaponova, V. Ya. Aleshkin, V. G. Shengurov, B. N. Zvonkov, O. V. Vikhrova, N. V. Baidus, Z. F. Krasil'nik, “Stimulated emission in heterostructures with double InGaAs/GaAsSb/GaAs quantum wells, grown on GaAs and Ge/Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1455–1458 ; Semiconductors, 50:11 (2016), 1435–1438 |
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| 16. |
V. G. Shengurov, V. Yu. Chalkov, S. A. Denisov, S. A. Matveev, A. V. Nezhdanov, A. I. Mashin, D. O. Filatov, M. V. Stepikhova, Z. F. Krasil'nik, “Conditions of growth of high-quality relaxed Si$_{1-x}$Ge$_{x}$ layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1270–1275 ; Semiconductors, 50:9 (2016), 1248–1253 |
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| 17. |
P. G. Serafimovich, M. V. Stepikhova, N. L. Kazanskii, S. A. Gusev, A. V. Egorov, E. V. Skorokhodov, Z. F. Krasil'nik, “On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1133–1137 ; Semiconductors, 50:8 (2016), 1112–1116 |
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2014 |
| 18. |
K. E. Kudryavtsev, D. I. Kryzhkov, L. V. Krasil’nikova, D. V. Shengurov, V. B. Shmagin, B. A. Andreev, Z. F. Krasil'nik, “Absorption cross section for the $^4I_{15/2}\to^4I_{13/2}$ transition of Er$^{3+}$ in Si:Er:O/SOI epitaxial layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014), 913–918 ; JETP Letters, 100:12 (2014), 807–811   |
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| 19. |
V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, S. A. Denisov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. A. Matveev, S. M. Nekorkin, V. G. Shengurov, “Stimulated emission from an InGaAs/GaAs/AlGaAs heterostructure grown on a Si substrate”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014), 900–903 ; JETP Letters, 100:12 (2014), 795–797 |
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2011 |
| 20. |
V. Ya. Aleshkin, L. V. Gavrilenko, D. M. Gaponova, Z. F. Krasil'nik, D. I. Kryzhkov, D. I. Kuritsyn, S. M. Sergeev, V. G. Lyssenko, “Near-field mechanism of photoluminescence excitation in quantum well heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:11 (2011), 890–894 ; JETP Letters, 94:11 (2011), 811–815 |
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| 21. |
V. Ya. Aleshkin, L. V. Gavrilenko, D. M. Gaponova, Z. F. Krasil'nik, D. I. Kryzhkov, D. I. Kuritsyn, S. M. Sergeev, V. G. Lyssenko, C. B. Sorensen, “Optical detection of an electric field in a GaAs/AlGaAs $n{-}i{-}n$ heterostructure with double quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 93:7 (2011), 437–441 ; JETP Letters, 93:7 (2011), 394–398 |
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2008 |
| 22. |
V. Ya. Aleshkin, A. A. Antonov, S. V. Gaponov, A. A. Dubinov, Z. F. Krasil'nik, K. E. Kudryavtsev, A. G. Spivakov, A. N. Yablonskii, “Tunable source of terahertz radiation based on the difference-frequency generation in a GaP crystal”, Pis'ma v Zh. Èksper. Teoret. Fiz., 88:12 (2008), 905–907 ; JETP Letters, 88:12 (2008), 787–789 |
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2005 |
| 23. |
M. V. Stepikhova, D. M. Zhigunov, V. G. Shengurov, V. Yu. Timoshenko, L. V. Krasil’nikova, V. Yu. Chalkov, S. P. Svetlov, O. A. Shalygina, P. K. Kashkarov, Z. F. Krasil'nik, “Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:10 (2005), 614–617 ; JETP Letters, 81:10 (2005), 494–497 |
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2002 |
| 24. |
N. V. Vostokov, Yu. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, A. V. Novikov, A. N. Yablonskii, “Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands”, Pis'ma v Zh. Èksper. Teoret. Fiz., 76:6 (2002), 425–429 ; JETP Letters, 76:6 (2002), 365–369 |
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2000 |
| 25. |
Z. F. Krasil'nik, A. V. Novikov, “Optical properties of strained Si<sub>1–<i>x</i></sub>Ge<sub><i>x</i></sub> and Si<sub>1–<i>x–y</i></sub>Ge<sub><i>x</i></sub>C<sub><i>y</i></sub> heterostructures”, UFN, 170:3 (2000), 338–341 ; Phys. Usp., 43:3 (2000), 295–298 |
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1991 |
| 26. |
V. I. Gavrilenko, Z. F. Krasil'nik, V. V. Nikonorov, E. V. Starikov, P. N. Shiktorov, “Теоретическое и экспериментальное исследование ВАХ и ГАХ горячих
дырок кремния”, Fizika i Tekhnika Poluprovodnikov, 25:8 (1991), 1315–1323 |
| 27. |
V. I. Gavrilenko, N. G. Kalugin, Z. F. Krasil'nik, V. V. Nikonorov, E. V. Starikov, P. N. Shiktorov, “Индуцированное циклотронное излучение тяжелых дырок в одноосно
деформированном германии”, Fizika i Tekhnika Poluprovodnikov, 25:4 (1991), 718–722 |
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1990 |
| 28. |
V. I. Gavrilenko, N. G. Kalugin, Z. F. Krasil'nik, V. V. Nikonorov, E. V. Starikov, P. N. Shiktorov., “Циклотронный резонанс дырок германия с отрицательными массами
при ${H}\not\parallel[001]$”, Fizika i Tekhnika Poluprovodnikov, 24:5 (1990), 825–828 |
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1989 |
| 29. |
E. P. Dodin, Z. F. Krasil'nik, “Моделирование явлений переноса горячих дырок кремния”, Fizika i Tekhnika Poluprovodnikov, 23:4 (1989), 585–591 |
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1988 |
| 30. |
V. I. Gavrilenko, E. P. Dodin, Z. F. Krasil'nik, V. V. Nikonorov, M. D. Chernobrovtseva, “Циклотронный резонанс горячих дырок германия”, Fizika i Tekhnika Poluprovodnikov, 22:7 (1988), 1233–1238 |
| 31. |
R. I. Bashirov, V. I. Gavrilenko, Z. F. Krasil'nik, A. M. Musaev, V. V. Nikonorov, S. Yu. Potapenko, M. D. Chernobrovtseva, “Межподзонные оптические переходы горячих дырок в одноосно
деформированном германии”, Fizika i Tekhnika Poluprovodnikov, 22:3 (1988), 479–484 |
| 32. |
Z. F. Krasil'nik, “Отрицательные массы и отрицательная проводимость
на циклотронном
резонансе в полупроводниках $p$-типа группы A$^{\text{III}}$B$^{\text{V}}$”, Fizika i Tekhnika Poluprovodnikov, 22:1 (1988), 101–104 |
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1987 |
| 33. |
V. I. Gavrilenko, E. P. Dodin, Z. F. Krasil'nik, M. D. Chernobrovtseva, “Magnetic Traps of Hot Holes in Silicon”, Fizika i Tekhnika Poluprovodnikov, 21:3 (1987), 484–488 |
| 34. |
A. M. Belayncev, V. I. Gavrilenko, Z. F. Krasil'nik, L. M. Kukin, V. V. Nikonorov, S. A. Pavlov, V. Parshin, D. G. Revin, “Spectral composition of maser emission on the cyclotron-resonance of heavy holes”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 13:10 (1987), 634–637 |
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1985 |
| 35. |
L. V. Berman, V. I. Gavrilenko, Z. F. Krasil'nik, V. V. Nikonorov, S. A. Pavlov, A. P. Chebotarev, “Luminescence of Germanium Hot Holes in Submillimeter Wavelength Range”, Fizika i Tekhnika Poluprovodnikov, 19:3 (1985), 369–377 |
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1984 |
| 36. |
E. P. Dodin, Z. F. Krasil'nik, “Nonlinear Cyclotron Resonance of Heavy Holes in Germanium in Streaming
in $\mathbf{ E}\parallel\mathbf{H}$ Fields”, Fizika i Tekhnika Poluprovodnikov, 18:5 (1984), 944–946 |
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2024 |
| 37. |
E. B. Aleksandrov, A. G. Zabrodskii, S. V. Ivanov, E. L. Ivchenko, V. V. Kveder, Z. F. Krasil'nik, G. Ya. Krasnikov, A. G. Litvak, O. V. Rudenko, A. I. Rudskoi, M. V. Sadovskii, A. V. Chaplik, “In memory of Robert Arnol'dovich Suris”, UFN, 194:6 (2024), 677–678 ; Phys. Usp., 67:6 (2024), 631–633 |
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2021 |
| 38. |
A. M. Sergeev, Yu. Yu. Balega, I. A. Shcherbakov, E. B. Aleksandrov, V. M. Andreev, A. L. Aseev, A. M. Bykov, I. V. Grekhov, V. V. Gusarov, A. V. Dvurechenskii, A. V. Ivanchik, E. L. Ivchenko, N. N. Kazansky, A. A. Kaplyanskii, V. V. Kveder, N. N. Kolachevsky, S. G. Konnikov, P. S. Kop'ev, Z. F. Krasil'nik, A. G. Litvak, S. V. Medvedev, Yu. V. Natochin, V. N. Parmon, E. E. Son, R. A. Suris, V. B. Timofeev, V. V. Ustinov, V. M. Ustinov, S. V. Ivanov, A. N. Aleshin, M. V. Arkhipov, P. N. Brunkov, A. I. Veinger, A. K. Vershovskii, E. A. Volkova, S. A. Gurevich, V. K. Gusev, V. A. Dergachev, A. G. Deryagin, O. V. Dudnik, V. V. Zhdanov, N. L. Istomina, A. M. Kalashnikova, E. S. Kornilova, E. V. Kustova, A.A. Lebedev, E.V. Lipatova, A. V. Nashchekin, R. V. Parfen'ev, M. P. Petrov, G. V. Skornyakov, E. M. Smirnov, G. S. Sokolovskii, A. V. Solomonov, M. G. Sushkova, E. I. Terukov, E. A. Chaban, O. L. Chagunava, A. P. Shergin, E. V. Shestopalova, M. L. Shmatov, A. A. Shmidt, V. L. Shubin, “Андрей Георгиевич Забродский, к 75-летию со дня рождения”, Zhurnal Tekhnicheskoi Fiziki, 91:6 (2021), 893–894 |
| 39. |
P. I. Arseev, V. A. Volkov, Yu. V. Gulyaev, Ya. V. Gindikin, S. V. Zaitsev-Zotov, E. L. Ivchenko, Z. F. Krasil'nik, I. V. Kukushkin, S. A. Nikitov, V. A. Petrov, R. A. Suris, A. A. Sukhanov, Yu. Ya. Tkach, D. R. Khokhlov, B. S. Shchamkhalova, “К 80-летию со дня рождения Владимира Алексеевича Сабликова”, Fizika i Tekhnika Poluprovodnikov, 55:5 (2021), 481 |
| 40. |
P. I. Arseev, A. A. Gorbatsevich, E. I. Demikhov, V. V. Kveder, N. N. Kolachevsky, Z. F. Krasil'nik, O. N. Krokhin, I. V. Kukushkin, G. A. Mesyats, R. A. Suris, V. B. Timofeev, I. A. Shcherbakov, “In memory of Nikolai Nikolaevich Sibeldin”, UFN, 191:3 (2021), 333–334 ; Phys. Usp., 64:3 (2021), 319–320 |
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