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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 11, Pages 1530–1533
DOI: https://doi.org/10.21883/FTP.2017.11.45105.19 (Mi phts6002) 		 
This article is cited in 4 scientific papers (total in 4 papers)

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate

V. Ya. Aleshkinab, N. V. Baidusab, A. A. Dubinovab, K. E. Kudryavtsevab, S. M. Nekorkina, A. V. Novikovab, A. V. Rykova, I. V. Samartseva, A. G. Fefelovc, D. V. Yurasovab, Z. F. Krasil'nikab

a Lobachevsky State University of Nizhny Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
c NPP "Salyut"
Full-text PDF (816 kB) Citations (4)
DOI: https://doi.org/10.21883/FTP.2017.11.45105.19
Abstract: InGaAs/GaAs/AlGaAs laser diodes with quantum wells are grown by the metal-organic chemical vapor deposition (MOCVD) method on an exact Si (001) substrate with a Ge buffer layer. The diodes generate stimulated emission in the pulsed mode at room temperature in the spectral range from 1.09 to 1.11 $\mu$m.
Received: 15.05.2017
Accepted: 31.05.2017
English version:
Semiconductors, 2017, Volume 51, Issue 11, Pages 1477–1480
DOI: https://doi.org/10.1134/S1063782617110057
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, K. E. Kudryavtsev, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, I. V. Samartsev, A. G. Fefelov, D. V. Yurasov, Z. F. Krasil'nik, “Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1530–1533; Semiconductors, 51:11 (2017), 1477–1480
Citation in format AMSBIB
\Bibitem{AleBaiDub17}
\by V.~Ya.~Aleshkin, N.~V.~Baidus, A.~A.~Dubinov, K.~E.~Kudryavtsev, S.~M.~Nekorkin, A.~V.~Novikov, A.~V.~Rykov, I.~V.~Samartsev, A.~G.~Fefelov, D.~V.~Yurasov, Z.~F.~Krasil'nik
\paper Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 11
\pages 1530--1533
\mathnet{http://mi.mathnet.ru/phts6002}
\crossref{https://doi.org/10.21883/FTP.2017.11.45105.19}
\elib{https://elibrary.ru/item.asp?id=30546396}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 11
\pages 1477--1480
\crossref{https://doi.org/10.1134/S1063782617110057}
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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