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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 9, Pages 1270–1275
(Mi phts6374)
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This article is cited in 1 scientific paper (total in 1 paper)
Manufacturing, processing, testing of materials and structures
Conditions of growth of high-quality relaxed Si$_{1-x}$Ge$_{x}$ layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire
V. G. Shengurova, V. Yu. Chalkova, S. A. Denisova, S. A. Matveevb, A. V. Nezhdanovb, A. I. Mashinb, D. O. Filatova, M. V. Stepikhovabc, Z. F. Krasil'nikbc a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Abstract:
The conditions of the epitaxial growth of high-quality relaxed Si$_{1-x}$Ge$_{x}$ layers by the combined method of the sublimation molecular-beam epitaxy and vapor-phase decomposition of monogermane on a hot wire are considered. The combined growth procedure proposed provides a means for growing Si$_{1-x}$Ge$_{x}$ layers with a thickness of up to 2 $\mu$m and larger. At reduced growth temperatures ($T_{S}\approx$ 325–350$^\circ$C), the procedure allows the growth of Si$_{1-x}$Ge$_{x}$ layers with a small surface roughness (rms $\approx$ 2 nm) and a low density of threading dislocations. The photoluminescence intensity of Si$_{1-x}$Ge$_{x}$ :Er layers is significantly (more than five times) higher than the photoluminescence intensity of layers produced under standard growth conditions ($T_{S}\approx$ 500$^\circ$C) and possess an external quantum efficiency estimated at a level of $\sim$0.4%.
Received: 25.02.2016 Accepted: 10.03.2016
Citation:
V. G. Shengurov, V. Yu. Chalkov, S. A. Denisov, S. A. Matveev, A. V. Nezhdanov, A. I. Mashin, D. O. Filatov, M. V. Stepikhova, Z. F. Krasil'nik, “Conditions of growth of high-quality relaxed Si$_{1-x}$Ge$_{x}$ layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1270–1275; Semiconductors, 50:9 (2016), 1248–1253
Linking options:
https://www.mathnet.ru/eng/phts6374 https://www.mathnet.ru/eng/phts/v50/i9/p1270
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