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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 5, Pages 695–698
DOI: https://doi.org/10.21883/FTP.2017.05.44431.8449 (Mi phts6169) 		 
This article is cited in 5 scientific papers (total in 5 papers)

Semiconductor physics

On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates

V. Ya. Aleshkinab, N. V. Baidusc, A. A. Dubinovab, Z. F. Krasil'nikab, S. M. Nekorkinac, A. V. Novikovab, A. V. Rykovc, D. V. Yurasovba, A. N. Yablonskiia

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
c Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Full-text PDF (151 kB) Citations (5)
DOI: https://doi.org/10.21883/FTP.2017.05.44431.8449
Abstract: GaAs/AlGaAs laser structures with InGaAs quantum wells are grown by metal-organic chemical vapor deposition (MOCVD) on exact Si(001) substrates and substrates inclined by 4$^\circ$ to the [011] axis with a relaxed Ge buffer layer, emitting in the transparency region of bulk silicon (the wavelength is longer than 1100 nm at room temperature). The threshold power densities of stimulated emission, observed for the structures grown on exact and inclined substrates are 45 and 37 kW/cm$^2$, respectively.
Received: 16.11.2016
Accepted: 21.11.2016
English version:
Semiconductors, 2017, Volume 51, Issue 5, Pages 663–666
DOI: https://doi.org/10.1134/S1063782617050037
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. Ya. Aleshkin, N. V. Baidus, A. A. Dubinov, Z. F. Krasil'nik, S. M. Nekorkin, A. V. Novikov, A. V. Rykov, D. V. Yurasov, A. N. Yablonskii, “On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 51:5 (2017), 695–698; Semiconductors, 51:5 (2017), 663–666
Citation in format AMSBIB
\Bibitem{AleBaiDub17}
\by V.~Ya.~Aleshkin, N.~V.~Baidus, A.~A.~Dubinov, Z.~F.~Krasil'nik, S.~M.~Nekorkin, A.~V.~Novikov, A.~V.~Rykov, D.~V.~Yurasov, A.~N.~Yablonskii
\paper On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 5
\pages 695--698
\mathnet{http://mi.mathnet.ru/phts6169}
\crossref{https://doi.org/10.21883/FTP.2017.05.44431.8449}
\elib{https://elibrary.ru/item.asp?id=29404926}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 5
\pages 663--666
\crossref{https://doi.org/10.1134/S1063782617050037}
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    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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