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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 8, Pages 822–829
DOI: https://doi.org/10.21883/FTP.2020.08.49633.10 (Mi phts5203) 		 
This article is cited in 2 scientific papers (total in 2 papers)

XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020

Enhancement of the luminescence signal from self-assembled Ge(Si) nanoislands due to interaction with the modes of two-dimensional photonic crystals

D. V. Yurasova, A. V. Novikovab, S. A. Dyakovc, M. V. Stepikhovaa, A. N. Yablonskiia, S. M. Sergeeva, D. E. Utkind, Z. F. Krasil'nika

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Lobachevsky State University of Nizhny Novgorod
c Skolkovo Institute of Science and Technology, Moscow, Russia
d Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (1021 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2020.08.49633.10
Abstract: The results of studies of the luminescence properties of two-dimensional photonic crystals formed on the basis of silicon structures with self-assembled Ge(Si) nanoislands are reported. The possibilities of substantially enhancing the luminescence response of the active medium (Ge(Si) nanoislands) in the wavelength range 1.2–1.6 $\mu$m are shown for such structures. The specific features of the luminescence response of a photonic crystal in the vicinity of the $\Gamma$ point of its Brillouin zone are studied. It is shown that, along with the broadband response characteristic of the radiative modes of photonic crystals, high-$Q$ resonances, for which the $Q$ factor exceeds 10$^3$, can also be observed in such structures. The last-mentioned resonances are observed in a certain range of lattice parameters of photonic crystals.
Keywords: Ge(Si) quantum dots, photonic crystals, photonic crystal modes, photoluminescence.
Funding agency Grant number
Russian Science Foundation 19-72-10011
The study was supported by the Russian Science Foundation, project no. 19-72-10011.
Received: 15.04.2020
Revised: 21.04.2020
Accepted: 21.04.2020
English version:
Semiconductors, 2020, Volume 54, Issue 8, Pages 975–981
DOI: https://doi.org/10.1134/S1063782620080254
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. V. Yurasov, A. V. Novikov, S. A. Dyakov, M. V. Stepikhova, A. N. Yablonskii, S. M. Sergeev, D. E. Utkin, Z. F. Krasil'nik, “Enhancement of the luminescence signal from self-assembled Ge(Si) nanoislands due to interaction with the modes of two-dimensional photonic crystals”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 822–829; Semiconductors, 54:8 (2020), 975–981
Citation in format AMSBIB
\Bibitem{YurNovDya20}
\by D.~V.~Yurasov, A.~V.~Novikov, S.~A.~Dyakov, M.~V.~Stepikhova, A.~N.~Yablonskii, S.~M.~Sergeev, D.~E.~Utkin, Z.~F.~Krasil'nik
\paper Enhancement of the luminescence signal from self-assembled Ge(Si) nanoislands due to interaction with the modes of two-dimensional photonic crystals
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 8
\pages 822--829
\mathnet{http://mi.mathnet.ru/phts5203}
\crossref{https://doi.org/10.21883/FTP.2020.08.49633.10}
\elib{https://elibrary.ru/item.asp?id=43800760}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 8
\pages 975--981
\crossref{https://doi.org/10.1134/S1063782620080254}
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