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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2011, Volume 94, Issue 11, Pages 890–894 (Mi jetpl2396)  
This article is cited in 2 scientific papers (total in 2 papers)

CONDENSED MATTER

Near-field mechanism of photoluminescence excitation in quantum well heterostructures

V. Ya. Aleshkina, L. V. Gavrilenkoa, D. M. Gaponovaa, Z. F. Krasil'nika, D. I. Kryzhkova, D. I. Kuritsyna, S. M. Sergeeva, V. G. Lyssenkob

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences
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Abstract: We report a study into the process of energy transfer between quantum wells divided by $30$-nm-thick opaque barriers. It was experimentally observed that the intensity of a photoluminescence signal from a quantum well increased by $15\%$ under resonant excitation of exciton transition in the adjacent quantum well. The quantum wells were $30$ nm apart. A radiative mechanism of energy transfer in the near-field region of emitting exciton is proposed. Within this theoretical model, the efficiency of the energy transfer decreases by a power law with greater distance between the quantum wells. The theory is found to be in qualitative agreement with the experimental results.
Received: 31.10.2011
English version:
Journal of Experimental and Theoretical Physics Letters, 2011, Volume 94, Issue 11, Pages 811–815
DOI: https://doi.org/10.1134/S0021364011230020
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. Ya. Aleshkin, L. V. Gavrilenko, D. M. Gaponova, Z. F. Krasil'nik, D. I. Kryzhkov, D. I. Kuritsyn, S. M. Sergeev, V. G. Lyssenko, “Near-field mechanism of photoluminescence excitation in quantum well heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 94:11 (2011), 890–894; JETP Letters, 94:11 (2011), 811–815
Citation in format AMSBIB
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