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This article is cited in 4 scientific papers (total in 4 papers)
CONDENSED MATTER
Stimulated emission from an InGaAs/GaAs/AlGaAs heterostructure grown on a Si substrate
V. Ya. Aleshkinab, N. V. Dikarevac, A. A. Dubinovab, S. A. Denisovac, Z. F. Krasil'nikba, K. E. Kudryavtsevba, S. A. Matveevc, S. M. Nekorkinc, V. G. Shengurovac a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b N. I. Lobachevski State University of Nizhni Novgorod
c Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
Abstract:
High-perfection artificial Ge/Si substrates are created by hot-wire chemical-vapor deposition, and InGaAs/GaAs/AlGaAs quantum-well heterostructures are grown on these substrates by metalorganic chemical-vapor deposition. Photoluminescence spectra of these heterostructures are investigated. Stimulated emission in the near-infrared spectral range under optical pumping is observed. Threshold pump powers for the onset of stimulated emission are determined and the variation of the emission spectra with the optical-pump power is examined.
Received: 05.11.2014
Citation:
V. Ya. Aleshkin, N. V. Dikareva, A. A. Dubinov, S. A. Denisov, Z. F. Krasil'nik, K. E. Kudryavtsev, S. A. Matveev, S. M. Nekorkin, V. G. Shengurov, “Stimulated emission from an InGaAs/GaAs/AlGaAs heterostructure grown on a Si substrate”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014), 900–903; JETP Letters, 100:12 (2014), 795–797
Linking options:
https://www.mathnet.ru/eng/jetpl4500 https://www.mathnet.ru/eng/jetpl/v100/i12/p900
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