N. V. Vostokov, Yu. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, A. V. Novikov, A. N. Yablonskii, “Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands”, Pis'ma v Zh. Èksper. Teoret. Fiz., 76:6 (2002), 425–429; JETP Letters, 76:6 (2002), 365

Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki

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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2002, Volume 76, Issue 6, Pages 425–429 (Mi jetpl2929)

This article is cited in 25 scientific papers (total in 25 papers)

CONDENSED MATTER

Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands

N. V. Vostokov, Yu. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, A. V. Novikov, A. N. Yablonskii

Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod

Full-text PDF (278 kB) Citations (25)

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Abstract: The photoluminescence spectra of structures with self-assembled GeSi/Si(001) islands are investigated as functions of the growth temperature. It is shown that the shift of the peak of photoluminescence from islands toward lower energies on decreasing the growth temperature is due to the suppression of Si diffusion into islands and an increase in the fraction of Ge in islands. A photoluminescence signal from the GeSi islands is found in the region of energies down to 0.6 eV, which is considerably smaller than the band-gap width in bulk Ge. The position of the peak of photoluminescence from islands is described well by the model of a real-space indirect optical transition with account of the real composition and elastic strains of the islands. Mono-and multilayer structures are obtained with self-assembled GeSi/Si(001) nanoislands exhibiting a photoluminescence signal in the region

1.3 \div 2 μ m

$1.3\div2\mu m$ at room temperature.

Received: 29.07.2002

English version:
Journal of Experimental and Theoretical Physics Letters, 2002, Volume 76, Issue 6, Pages 365–369
DOI: https://doi.org/10.1134/1.1525038

Bibliographic databases:

Document Type: Article

PACS: 78.55.Ap, 78.67.Hc, 81.05.Cy, 81.15.Hy

Language: Russian

Citation: N. V. Vostokov, Yu. N. Drozdov, Z. F. Krasil'nik, D. N. Lobanov, A. V. Novikov, A. N. Yablonskii, “Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands”, Pis'ma v Zh. Èksper. Teoret. Fiz., 76:6 (2002), 425–429; JETP Letters, 76:6 (2002), 365–369

Citation in format AMSBIB

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\paper Low-energy photoluminescence of structures with GeSi/Si(001) self-assembled nanoislands

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\jour JETP Letters

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Linking options:

https://www.mathnet.ru/eng/jetpl2929

https://www.mathnet.ru/eng/jetpl/v76/i6/p425

This publication is cited in the following 25 articles:

V B Shmagin, A N Yablonskiy, M V Stepikhova, D V Yurasov, A N Mikhaylov, D I Tetelbaum, E E Rodyakina, E E Morozova, D V Shengurov, S A Kraev, P A Yunin, A I Belov, A V Novikov, Nanotechnology, 35:16 (2024), 165203
Dmitry V. Yurasov, Sergey A. Dyakov, Ilia A. Smagin, Sergei G. Tikhodeev, Nikolay A. Gippius, Margarita V. Stepikhova, Artem V. Peretokin, Mikhail V. Shaleev, Zhanna V. Smagina, Dmitry E. Utkin, Alexey V. Novikov, Applied Physics Letters, 125:2 (2024)
A. N. Yablonskiy, V. B. Shmagin, V. E. Zakharov, D. V. Yurasov, M. V. Shaleev, E. V. Demidov, A. N. Mikhaylov, D. I. Tetelbaum, E. E. Rodyakina, E. E. Morozova, D. V. Shengurov, S. A. Kraev, A. V. Novikov, Applied Physics Letters, 125:23 (2024)
Artem V. Peretokin, Dmitry V. Yurasov, Margarita V. Stepikhova, Mikhail V. Shaleev, Artem N. Yablonskiy, Dmitry V. Shengurov, Sergey A. Dyakov, Ekaterina E. Rodyakina, Zhanna V. Smagina, Alexey V. Novikov, Nanomaterials, 13:10 (2023), 1678
Margarita Stepikhova, Sergey Dyakov, Artem Peretokin, Mikhail Shaleev, Ekaterina Rodyakina, Alexey Novikov, Nanomaterials, 12:15 (2022), 2687
Novikov V A., Smagina V Zh., Stepikhova V M., Zinovyev V.A., Rudin S.A., Dyakov S.A., Rodyakina E.E., Nenashev V A., Sergeev S.M., Peretokin V A., Dvurechenskii V A., Nanomaterials, 11:4 (2021), 909
Dyakov S.A., Stepikhova V M., Bogdanov A.A., Novikov V A., Yurasov V D., Shaleev V M., Krasilnik Z.F., Tikhodeev S.G., Gippius N.A., Laser Photon. Rev., 15:7 (2021), 2000242, 2000242
Yablonskiy A.N., Novikov V A., Stepikhova V M., Sergeev S.M., Baidakova N.A., Shaleev V M., Krasilnik Z.F., Semiconductors, 54:10 (2020), 1352–1359
Smagina V Zh., Novikov V A., Stepikhova V M., Zinovyev V.A., Rodyakina E.E., Nenashev V A., Sergeev S.M., Peretokin V A., Kuchinskaya P.A., Shaleev V M., Gusev S.A., Dvurechenskii V A., Semiconductors, 54:8 (2020), 853–859
Yurasov V D., Novikov V A., Dyakov S.A., Stepikhova V M., Yablonskiy A.N., Sergeev S.M., Utkin D.E., Krasilnik Z.F., Semiconductors, 54:8 (2020), 975–981
Stepikhova M.V., Novikov A.V., Yablonskiy A.N., Shaleev M.V., Utkin D.E., Rutckaia V.V., Skorokhodov E.V., Sergeev S.M., Yurasov D.V., Krasilnik Z.F., Semicond. Sci. Technol., 34:2 (2019), 024003
Rutckaia V., Heyrot F., Novikov A., Shaleev M., Petrov M., Schilling J., Nano Lett., 17:11 (2017), 6886–6892
Yablonskiy A.N., Baidakova N.A., Novikov A.V., Lobanov D.N., Shaleev M.V., Semiconductors, 49:11 (2015), 1410–1414
Yakimov A.I., Kirienko V.V., Armbrister V.A., Dvurechenskii A.V., Semicond. Sci. Technol., 29:8 (2014), 085011
D. N. Lobanov, A. V. Novikov, K. E. Kudryavtsev, M. V. Shaleev, D. V. Shengurov, Z. F. Krasilnik, N. D. Zakharov, P. Werner, Semiconductors, 46:11 (2012), 1418
Z F Krasilnik, A V Novikov, D N Lobanov, K E Kudryavtsev, A V Antonov, S V Obolenskiy, N D Zakharov, P Werner, Semicond. Sci. Technol., 26:1 (2011), 014029
D.N. Lobanov, A.V. Novikov, K.E. Kudryavtsev, A.N. Yablonskiy, A.V. Antonov, Yu.N. Drozdov, D.V. Shengurov, V.B. Shmagin, Z.F. Krasilnik, N.D. Zakharov, P. Werner, Physica E: Low-dimensional Systems and Nanostructures, 41:6 (2009), 935
A. A. Shklyaev, M. Ichikawa, Phys. Usp., 51:2 (2008), 133–161
Yu.N. Drozdov, Z.F. Krasilnik, K.E. Kudryavtsev, D.N. Lobanov, A.V. Novikov, M.V. Shaleev, D.V. Shengurov, V.B. Shmagin, A.N. Yablonskiy, Thin Solid Films, 517:1 (2008), 398
M. V. Shaleev, A. V. Novikov, A. N. Yablonskiy, Y. N. Drozdov, D. N. Lobanov, Z. F. Krasilnik, O. A. Kuznetsov, Applied Physics Letters, 88:1 (2006)

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