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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2005, Volume 81, Issue 10, Pages 614–617
(Mi jetpl1749)
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This article is cited in 12 scientific papers (total in 12 papers)
CONDENSED MATTER
Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures
M. V. Stepikhovaa, D. M. Zhigunovb, V. G. Shengurovc, V. Yu. Timoshenkob, L. V. Krasil’nikovaa, V. Yu. Chalkovc, S. P. Svetlovc, O. A. Shalyginab, P. K. Kashkarovb, Z. F. Krasil'nika a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b M. V. Lomonosov Moscow State University, Faculty of Physics
c Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University
Abstract:
Population inversion of the energy levels of Er3+ ions in Si/Si1−x Gex:Er/Si (x = 0.28) structures has been achieved due to electron excitation transfer from the semiconductor matrix. An analysis of the photoluminescence kinetics at a wavelength of 1.54 μm shows that up to 80% of the Er3+ ions are converted into excited states. This effect, together with the high photoluminescence intensity observed in the structures studied, shows good prospects for obtaining lasers compatible with planar silicon technology.
Received: 28.04.2005
Citation:
M. V. Stepikhova, D. M. Zhigunov, V. G. Shengurov, V. Yu. Timoshenko, L. V. Krasil’nikova, V. Yu. Chalkov, S. P. Svetlov, O. A. Shalygina, P. K. Kashkarov, Z. F. Krasil'nik, “Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:10 (2005), 614–617; JETP Letters, 81:10 (2005), 494–497
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https://www.mathnet.ru/eng/jetpl1749 https://www.mathnet.ru/eng/jetpl/v81/i10/p614
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Abstract page: | 302 | Full-text PDF : | 80 | References: | 52 |
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