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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 8, Pages 1133–1137
(Mi phts6400)
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This article is cited in 6 scientific papers (total in 6 papers)
Manufacturing, processing, testing of materials and structures
On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology
P. G. Serafimovichab, M. V. Stepikhovacd, N. L. Kazanskiiab, S. A. Gusevcd, A. V. Egorovb, E. V. Skorokhodovcd, Z. F. Krasil'nikdc a Image Processing Systems Institute, Russian Academy of Sciences, Samara
b Samara State Aerospace University
c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
d Lobachevsky State University of Nizhny Novgorod
Abstract:
The production technology of a photonic-crystal cavity formed as a group of holes in a silicon strip waveguide by ion-beam etching is described. The parasitic effect associated with hole conicity which develops upon hole formation by the given technology is studied. Numerical simulation shows that the hole-conicityinduced decrease in the cavity quality factor can be compensated with consideration for the hole volume. The influence of the waveguide thickness on the resonance wavelength and quality factor of the photonic-crystal cavity is analyzed.
Received: 17.12.2015 Accepted: 24.12.2015
Citation:
P. G. Serafimovich, M. V. Stepikhova, N. L. Kazanskii, S. A. Gusev, A. V. Egorov, E. V. Skorokhodov, Z. F. Krasil'nik, “On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1133–1137; Semiconductors, 50:8 (2016), 1112–1116
Linking options:
https://www.mathnet.ru/eng/phts6400 https://www.mathnet.ru/eng/phts/v50/i8/p1133
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Abstract page: | 40 | Full-text PDF : | 19 |
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