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This article is cited in 2 scientific papers (total in 2 papers)
XXIV International symposium Nanophysics and nanoelectronics, Nizhny Novgorod, march 10-13, 2020
Kinetics of the luminescence response of self-assembled Ge(Si) nanoislands embedded in two-dimensional photonic crystals
A. N. Yablonskii, A. V. Novikov, M. V. Stepikhova, S. M. Sergeev, N. A. Baidakova, M. V. Shaleev, Z. F. Krasil'nik Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Abstract:
The results of studies of the spectral and kinetic characteristics of the photoluminescence of photonic crystals formed on the basis of structures with self-assembled Ge(Si) nanoislands are reported. The experimentally observed enhancement of the photoluminescence-signal intensity of the nanoislands in the spectral range 1.1–1.6 $\mu$m due to interaction with the radiative modes of photonic crystals in the vicinity of the $\Gamma$ point of the Brillouin zone and the effect of such interaction on the probability of radiative recombination in Ge(Si) nanoislands are considered.
Keywords:
Ge(Si) nanoislands, photonic crystals, photoluminescence, photoluminescence kinetics, Purcell's effect.
Received: 15.04.2020 Revised: 21.04.2020 Accepted: 21.04.2020
Citation:
A. N. Yablonskii, A. V. Novikov, M. V. Stepikhova, S. M. Sergeev, N. A. Baidakova, M. V. Shaleev, Z. F. Krasil'nik, “Kinetics of the luminescence response of self-assembled Ge(Si) nanoislands embedded in two-dimensional photonic crystals”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1150–1157; Semiconductors, 54:10 (2020), 1352–1359
Linking options:
https://www.mathnet.ru/eng/phts5153 https://www.mathnet.ru/eng/phts/v54/i10/p1150
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