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This article is cited in 4 scientific papers (total in 4 papers)
CONDENSED MATTER
Absorption cross section for the $^4I_{15/2}\to^4I_{13/2}$ transition of Er$^{3+}$ in Si:Er:O/SOI epitaxial layers
K. E. Kudryavtsevab, D. I. Kryzhkovab, L. V. Krasil’nikovaab, D. V. Shengurovab, V. B. Shmaginab, B. A. Andreevab, Z. F. Krasil'nikab a N. I. Lobachevski State University of Nizhni Novgorod
b Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
Abstract:
Optical losses caused by the interaction of radiation with optically active Er$^{3+}$ ions in epitaxial waveguide structures Si:Er/SOI have been directly measured. The cross section for the $^{4}I_{13/2} \to {}^{4}I_{15/2}$ radiative transition in the Er3+ ion has been estimated as $\sigma_{300\,\text{K}}\sim 8\cdot10^{-19}$ cm$^2$ at $T = 300$ K and $\sigma_{10\,\text{K}}\sim 10^{-17}$ cm$^2$ at $T = 10$ K.
Received: 10.11.2014
Citation:
K. E. Kudryavtsev, D. I. Kryzhkov, L. V. Krasil’nikova, D. V. Shengurov, V. B. Shmagin, B. A. Andreev, Z. F. Krasil'nik, “Absorption cross section for the $^4I_{15/2}\to^4I_{13/2}$ transition of Er$^{3+}$ in Si:Er:O/SOI epitaxial layers”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:12 (2014), 913–918; JETP Letters, 100:12 (2014), 807–811
Linking options:
https://www.mathnet.ru/eng/jetpl4502 https://www.mathnet.ru/eng/jetpl/v100/i12/p913
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