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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
D. A. Antonov, D. O. Filatov, A. S. Novikov, A. V. Kruglov, I. N. Antonov, A. V. Zdoroveyshchev, O. N. Gorshkov, “Resistive switching in individual ferromagnetic filaments in ZrO$_{2}$(Y)/Ni based memristive stacks”, Zhurnal Tekhnicheskoi Fiziki, 91:10 (2021), 1474–1478   |
| 2. |
D. O. Filatov, M. E. Shenina, I. A. Rozhentsov, M. N. Koryazhkina, A. S. Novikov, I. N. Antonov, A. V. Ershov, A. P. Gorshkov, O. N. Gorshkov, “Effect of optical illumination on resistive switching in MOS stacks based on ZrO$_2$(Y) films with Au nanoparticles”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 754–757 ; Semiconductors, 55:9 (2021), 731–734 |
| 3. |
V. A. Vorontsov, D. A. Antonov, A. V. Kruglov, I. N. Antonov, V. E. Kotomina, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, D. O. Filatov, O. N. Gorshkov, “Demonstration of resistive switching effect in separate filaments in Ag/Ge/Si memristor structures by conductive atomic force microscopy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021), 23–26 |
| 4. |
D. A. Antonov, A. S. Novikov, D. O. Filatov, A. V. Kruglov, I. N. Antonov, A. V. Zdoroveyshchev, O. N. Gorshkov, “The formation of nanosized ferromagnetic Ni filaments in films of ZrO$_2$(Y)”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:11 (2021), 30–32 ; Tech. Phys. Lett., 47:7 (2021), 539–541 |
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2020 |
| 5. |
D. O. Filatov, D. A. Antonov, I. N. Antonov, A. I. Belov, V. N. Baranova, M. E. Shenina, O. N. Gorshkov, “Resistive switching of memristors based on stabilized zirconia by complex signals”, Fizika Tverdogo Tela, 62:4 (2020), 556–561 ; Phys. Solid State, 62:4 (2020), 642–647 |
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| 6. |
D. O. Filatov, D. A. Antonov, I. N. Antonov, M. A. Ryabova, O. N. Gorshkov, “An atomic force microscopic study of resistive switching resonance activation in ZrO$_{2}$(Y) films”, Zhurnal Tekhnicheskoi Fiziki, 90:11 (2020), 1825–1829 ; Tech. Phys., 65:11 (2020), 1744–1747 |
| 7. |
S. V. Tikhov, V. G. Shengurov, S. A. Denisov, I. N. Antonov, A. V. Kruglov, A. I. Belov, D. O. Filatov, O. N. Gorshkov, A. N. Mikhaylov, “Resistive switching in metal–oxide–semiconductor structures with GeSi nanoislands on a silicon substrate”, Zhurnal Tekhnicheskoi Fiziki, 90:10 (2020), 1741–1749 ; Tech. Phys., 65:10 (2020), 1668–1676 |
| 8. |
S. V. Tikhov, A. I. Belov, D. S. Korolev, I. N. Antonov, A. A. Sushkov, D. A. Pavlov, D. I. Tetelbaum, O. N. Gorshkov, A. N. Mikhaylov, “Electrophysical characteristics of multilayer memristive nanostructures based on yttria-stabilized zirconia and tantalum oxide”, Zhurnal Tekhnicheskoi Fiziki, 90:2 (2020), 298–304 ; Tech. Phys., 65:2 (2020), 284–290 |
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| 9. |
O. N. Gorshkov, V. G. Shengurov, S. A. Denisov, V. Yu. Chalkov, I. N. Antonov, A. V. Kruglov, M. E. Shenina, V. E. Kotomina, D. O. Filatov, D. A. Serov, “Resistive switching in memristors based on Ag/Ge/Si heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:2 (2020), 44–46 ; Tech. Phys. Lett., 46:1 (2020), 91–93 |
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2019 |
| 10. |
D. O. Filatov, M. N. Koryazhkina, D. A. Antonov, I. N. Antonov, D. A. Liskin, M. A. Ryabova, O. N. Gorshkov, “Atomic-force microscopy of resistive nonstationary signal switching in ZrO$_{2}$(Y) films”, Zhurnal Tekhnicheskoi Fiziki, 89:11 (2019), 1669–1673 ; Tech. Phys., 64:11 (2019), 1579–1583 |
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| 11. |
S. V. Tikhov, O. N. Gorshkov, A. I. Belov, I. N. Antonov, A. I. Morozov, M. N. Koryazhkina, A. N. Mikhaylov, “Mechanisms of current transport and resistive switching in capacitors with yttria-stabilized hafnia layers”, Zhurnal Tekhnicheskoi Fiziki, 89:6 (2019), 927–934 ; Tech. Phys., 64:6 (2019), 873–880 |
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2018 |
| 12. |
S. Yu. Zubkov, I. N. Antonov, O. N. Gorshkov, A. P. Kasatkin, R. N. Kriukov, D. E. Nikolichev, D. A. Pavlov, M. E. Shenina, “X-ray photoelectron spectroscopy of stabilized zirconia films with embedded Au nanoparticles formed under irradiation with gold ions”, Fizika Tverdogo Tela, 60:3 (2018), 591–595 ; Phys. Solid State, 60:3 (2018), 598–602 |
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| 13. |
M. B. Semenov, V. D. Krevchik, O. N. Gorshkov, D. O. Filatov, Y. Dakhnovsky, A.V. Nikolaev, A. P. Shkurinov, V. Yu. Timoshenko, P. V. Krevchik, A. K. Malik, Y. H. Wang, T. R. Li, Y. Zhu, S. Zhuang, R. V. Zaitsev, I. S. Antonov, I. M. Semenov, A. K. Aringazin, A. V. Shorokhov, Y. H. Wang, “A comparative analysis of the observed effects of 2d tunneling bifurcations for quasi-one-dimensional and quasi-two-dimensional au-qd systems in an external electric field”, Nanosystems: Physics, Chemistry, Mathematics, 9:6 (2018), 724–734  |
| 14. |
S. V. Tikhov, O. N. Gorshkov, I. N. Antonov, D. I. Tetelbaum, A. N. Mikhaylov, A. I. Belov, A. I. Morozov, P. Karakolis, P. Dimitrakis, “Behavioral features of MIS memristors with a Si$_{3}$N$_{4}$ nanolayer fabricated on a conductive Si substrate”, Fizika i Tekhnika Poluprovodnikov, 52:12 (2018), 1436–1442 ; Semiconductors, 52:12 (2018), 1540–1546 |
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| 15. |
D. O. Filatov, I. N. Antonov, D. Yu. Sinutkin, D. A. Liskin, A. P. Gorshkov, O. N. Gorshkov, V. E. Kotomina, M. E. Shenina, S. V. Tikhov, I. S. Korotaeva, “Plasmon resonance induced photoconductivity in the yttria stabilized zirconia films with embedded Au nanoclusters”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 470 ; Semiconductors, 52:4 (2018), 465–467 |
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| 16. |
D. O. Filatov, V. V. Karzanov, I. N. Antonov, O. N. Gorshkov, “Features of switching memristor structures to a high-resistance state by sawtooth pulses”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:24 (2018), 88–93 ; Tech. Phys. Lett., 44:12 (2018), 1160–1162 |
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2017 |
| 17. |
S. A. Gerasimova, A. N. Mikhaylov, A. I. Belov, D. S. Korolev, O. N. Gorshkov, V. B. Kazantsev, “Simulation of synaptic coupling of neuron-like generators via a memristive device”, Zhurnal Tekhnicheskoi Fiziki, 87:8 (2017), 1248–1254 ; Tech. Phys., 62:8 (2017), 1259–1265 |
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2016 |
| 18. |
S. V. Tikhov, O. N. Gorshkov, I. N. Antonov, A. P. Kasatkin, D. S. Korolev, A. I. Belov, A. N. Mikhaylov, D. I. Tetelbaum, “Change of immitance during electroforming and resistive switching in the metal-insulator-metal memristive structures based on SiO$_{x}$”, Zhurnal Tekhnicheskoi Fiziki, 86:5 (2016), 107–111 ; Tech. Phys., 61:5 (2016), 745–749 |
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| 19. |
M. N. Koryazhkina, S. V. Tikhov, O. N. Gorshkov, A. P. Kasatkin, I. N. Antonov, “Electrical and photoelectric properties of Si-based metal–insulator–semiconductor structures with Au nanoparticles at the insulator–semiconductor interface”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1639–1643 ; Semiconductors, 50:12 (2016), 1614–1618 |
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| 20. |
S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, A. P. Kasatkin, I. N. Antonov, O. V. Vikhrova, A. I. Morozov, “Physical properties of metal–insulator–semiconductor structures based on $n$-GaAs with InAs quantum dots deposited onto the surface of an $n$-GaAs layer”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1615–1619 ; Semiconductors, 50:12 (2016), 1589–1594 |
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| 21. |
S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, I. N. Antonov, A. P. Kasatkin, “Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016), 78–84 ; Tech. Phys. Lett., 42:5 (2016), 536–538 |
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| 22. |
A. I. Belov, A. N. Mikhaylov, D. S. Korolev, V. A. Sergeev, I. N. Antonov, O. N. Gorshkov, D. I. Tetelbaum, “Resistive switching in Au/SiO$_{x}$/TiN/Ti memristive structures with varied geometric parameters and stoichiometry of dielectric film”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016), 17–24 ; Tech. Phys. Lett., 42:5 (2016), 505–508 |
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| 23. |
S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, I. N. Antonov, A. P. Kasatkin, “Specific features of nonequilibrium depletion accompanied by the trapping of minority carriers by surface states in metal–insulator–semiconductor structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:3 (2016), 52–60 ; Tech. Phys. Lett., 42:2 (2016), 138–142 |
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| 24. |
O. N. Gorshkov, I. N. Antonov, D. O. Filatov, M. E. Shenina, A. P. Kasatkin, D. A. Pavlov, A. I. Bobrov, “Forming dense arrays of gold nanoparticles in thin films of yttria stabilized zirconia by magnetron sputtering”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:1 (2016), 72–79 ; Tech. Phys. Lett., 42:1 (2016), 36–39 |
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2011 |
| 25. |
O. L. Antipov, S. Yu. Golovkin, O. N. Gorshkov, N. G. Zakharov, A. P. Zinov'ev, A. P. Kasatkin, M. V. Kruglova, M. O. Marychev, A. A. Novikov, N. V. Sakharov, E. V. Chuprunov, “Structural, optical, and spectroscopic properties and efficient two-micron lasing of new Tm<sup>3+</sup>:Lu<sub>2</sub>O<sub>3</sub> ceramics”, Kvantovaya Elektronika, 41:10 (2011), 863–868 [Quantum Electron., 41:10 (2011), 863–868  ] |
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2000 |
| 26. |
O. N. Gorshkov, E. M. Dianov, N. B. Zvonkov, G. A. Maksimov, V. N. Protopopov, Yu. I. Chigirinskii, “Luminescence of Cr<sup>4+</sup>:Ca<sub>2</sub>GeO<sub>4</sub> films in the near infrared region”, Kvantovaya Elektronika, 30:3 (2000), 261–262 [Quantum Electron., 30:3 (2000), 261–262 ] |
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1984 |
| 27. |
V. K. Vasil'ev, O. N. Gorshkov, Yu. A. Danilov, V. S. Tulovchikov, “Characteristic X-Ray Radiation Study
of Disturbances in Low-Lying Levels
in InSb Implanted Single Crystals”, Fizika i Tekhnika Poluprovodnikov, 18:1 (1984), 189–191 |
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2011 |
| 28. |
O. L. Antipov, S. Yu. Golovkin, O. N. Gorshkov, N. G. Zakharov, A. P. Zinov'ev, A. P. Kasatkin, M. V. Kruglova, M. O. Marychev, A. A. Novikov, N. V. Sakharov, E. V. Chuprunov, “Errata to the article: Structural, optical, and spectroscopic properties and efficient two-micron lasing of new Tm<sup>3+</sup>:Lu<sub>2</sub>O<sub>3</sub> ceramics”, Kvantovaya Elektronika, 41:12 (2011), 1130 |
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2009 |
| 29. |
V. Ch. Zhukovskii, O. N. Gorshkov, V. D. Krevchik, M. B. Semenov, Yu. G. Smirnov, E. V. Chuprunov, V. A. Rudin, N. Yu. Skibitskaya, P. V. Krevchik, D. O. Filatov, D. A. Antonov, M. A. Lapshina, M. E. Shenina, Ya. Kendji, “Features of two-dimensional tunnel bifurcations under conditions of an external electric field”, University proceedings. Volga region. Physical and mathematical sciences, 2009, no. 2, 123–135 |
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