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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
D. S. Abramkin, M. O. Petrushkov, E. A. Emelyanov, A. V. Nenashev, M. Yu. Yesin, A. V. Vasev, M. A. Putyato, D. B. Bogomolov, A. K. Gutakovskii, V. V. Preobrazhenskii, “Formation of InAs/GaP heterostructures with quantum wells on silicon substrates by molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 139–146   ; Semiconductors, 55:2 (2021), 194–201 |
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2020 |
| 2. |
M. O. Petrushkov, D. S. Abramkin, E. A. Emelyanov, M. A. Putyato, A. V. Vasev, I. D. Loshkarev, M. Yu. Yesin, O. S. Komkov, D. D. Firsov, V. V. Preobrazhenskii, “Effect of the crystallographic orientation of GaSb films on their structural properties during MBE heteroepitaxy on vicinal Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1289–1295 ; Semiconductors, 54:12 (2020), 1548–1554 |
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| 3. |
V. V. Utochkin, M. A. Fadeev, S. S. Krishtopenko, V. V. Rumyantsev, V. Ya. Aleshkin, A. A. Dubinov, S. V. Morozov, B. R. Semyagin, M. A. Putyato, E. A. Emelyanov, V. V. Preobrazhenskii, V. I. Gavrilenko, “Photoluminescence spectra of InAs/GaInSb/InAs quantum wells in the mid-infrared region”, Fizika i Tekhnika Poluprovodnikov, 54:9 (2020), 929–932 ; Semiconductors, 54:9 (2020), 1119–1122 |
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| 4. |
D. M. Legan, O. P. Pchelyakov, V. V. Preobrazhenskii, “Optimization of the In$_{0.3}$Ga$_{0.7}$As-layer thickness in a triple-junction In$_{0.3}$Ga$_{0.7}$As/GaAs/In$_{0.5}$Ga$_{0.5}$P solar cell”, Fizika i Tekhnika Poluprovodnikov, 54:1 (2020), 65–68 ; Semiconductors, 54:1 (2020), 108–111 |
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| 5. |
E. A. Emelyanov, A. G. Nastovjak, M. O. Petrushkov, M. Yu. Yesin, T. A. Gavrilova, M. A. Putyato, N. L. Shwartz, V. A. Shvets, A. V. Vasev, B. R. Semyagin, V. V. Preobrazhenskii, “A mask based on a Si epitaxial layer for the self-catalytic nanowire growth on GaAs (111)$B$ and GaAs (100) substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:4 (2020), 11–14 ; Tech. Phys. Lett., 46:2 (2020), 161–164 |
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2019 |
| 6. |
M. A. Putyato, N. A. Valisheva, M. O. Petrushkov, V. V. Preobrazhenskii, I. B. Chistokhin, B. R. Semyagin, E. A. Emelyanov, A. V. Vasev, A. F. Skachkov, G. I. Yurko, I. I. Nesterenko, “A lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure”, Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019), 1071–1078 ; Tech. Phys., 64:7 (2019), 1010–1016 |
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| 7. |
A. N. Kosarev, V. V. Chaldyshev, A. A. Kondikov, T. A. Vartanyan, N. A. Toropov, I. A. Gladskikh, P. V. Gladskikh, I. Akimov, M. Bayer, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, “Epitaxial InGaAs quantum dots in Al$_{0.29}$Ga$_{0.71}$ As matrix: intensity and kinetics of luminescence in the near field of silver nanoparticles”, Optics and Spectroscopy, 126:5 (2019), 573–577 ; Optics and Spectroscopy, 126:5 (2019), 492–496 |
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| 8. |
D. S. Abramkin, M. O. Petrushkov, M. A. Putyato, B. R. Semyagin, E. A. Emelyanov, V. V. Preobrazhenskii, A. K. Gutakovskii, T. S. Shamirzaev, “GaAs/GaP quantum-well heterostructures grown on Si substrates”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1167–1171 ; Semiconductors, 53:9 (2019), 1143–1147 |
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| 9. |
E. A. Emelyanov, A. V. Vasev, B. R. Semyagin, M. Yu. Yesin, I. D. Loshkarev, A. P. Vasilenko, M. A. Putyato, M. O. Petrushkov, V. V. Preobrazhenskii, “The growth of InAs$_{x}$Sb$_{1-x}$ solid solutions on miscuted GaAs(001) substrates by molecular-beam epitaxy method”, Fizika i Tekhnika Poluprovodnikov, 53:4 (2019), 512–519 ; Semiconductors, 53:4 (2019), 503–510 |
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2018 |
| 10. |
V. I. Ushanov, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, “Diffusion blurring of GaAs quantum wells grown at low temperature”, Fizika i Tekhnika Poluprovodnikov, 52:13 (2018), 1597–1600 ; Semiconductors, 52:13 (2018), 1704–1707 |
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| 11. |
A. V. Vasev, M. A. Putyato, V. V. Preobrazhenskii, A. K. Bakarov, A. I. Toropov, “Kinetics of structural changes on GaSb(001) singular and vicinal surfaces during the UHV annealing”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 525 ; Semiconductors, 52:5 (2018), 664–666 |
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| 12. |
V. I. Ushanov, V. V. Chaldyshev, V. V. Preobrazhenskiy, M. A. Putyato, B. R. Semyagin, “Resonant optical reflection from AsSb–AlGaAs metamaterials and structures”, Fizika i Tekhnika Poluprovodnikov, 52:4 (2018), 471 ; Semiconductors, 52:4 (2018), 468–472 |
| 13. |
M. O. Petrushkov, M. A. Putyato, I. B. Chistokhin, B. R. Semyagin, E. A. Emelyanov, M. Yu. Yesin, T. A. Gavrilova, A. V. Vasev, V. V. Preobrazhenskii, “Zinc diffusion into InP via a narrow gap from a planar Zn$_{3}$P$_{2}$-based source”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:14 (2018), 19–25 ; Tech. Phys. Lett., 44:7 (2018), 612–614 |
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2017 |
| 14. |
S. Ruffenach, S. S. Krishtopenko, L. S. Bovkun, A. V. Ikonnikov, M. Marcinkiewicz, C. Consejo, M. Potemski, B. Piot, M. Orlita, B. R. Semyagin, M. A. Putyato, E. A. Emelyanov, V. V. Preobrazhenskii, W. Knap, F. Gonzalez-Posada, G. Boissier, E. Tournié, F. Teppe, V. I. Gavrilenko, “Magnetoabsorption of Dirac fermions in InAs/GaSb/InAs “Three-Layer” gapless quantum wells”, Pis'ma v Zh. Èksper. Teoret. Fiz., 106:11 (2017), 696–701 ; JETP Letters, 106:11 (2017), 727–732   |
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| 15. |
A. Kononov, S. V. Egorov, N. Titova, B. R. Semyagin, V. V. Preobrazhenskii, M. A. Putyato, E. A. Emelyanov, E. V. Deviatov, “Interlayer current near the edge of an $\mathrm{InAs/GaSb}$ double quantum well in proximity with a superconductor”, Pis'ma v Zh. Èksper. Teoret. Fiz., 105:8 (2017), 497–498 ; JETP Letters, 105:8 (2017), 508–513 |
| 16. |
S. S. Krishtopenko, A. V. Ikonnikov, K. V. Marem'yanin, L. S. Bovkun, K. E. Spirin, A. M. Kadykov, M. Marcinkiewicz, S. Ruffenach, C. Consejo, F. Teppe, W. Knap, B. R. Semyagin, M. A. Putyato, E. A. Emelyanov, V. V. Preobrazhenskii, V. I. Gavrilenko, “Cyclotron resonance of Dirac fermions in InAs/GaSb/InAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 40–44 ; Semiconductors, 51:1 (2017), 38–42 |
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2016 |
| 17. |
A. Kononov, S. V. Egorov, V. A. Kostarev, B. R. Semyagin, V. V. Preobrazhenskii, M. A. Putyato, E. A. Emelyanov, E. V. Deviatov, “Specular Andreev reflection at the edge of an InAs/GaSb double quantum well with band inversion”, Pis'ma v Zh. Èksper. Teoret. Fiz., 104:1 (2016), 24–25 ; JETP Letters, 104:1 (2016), 26–31 |
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| 18. |
V. I. Ushanov, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, “Bragg resonance in a system of AsSb plasmonic nanoinclusions in AlGaAs”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1620–1624 ; Semiconductors, 50:12 (2016), 1595–1599 |
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| 19. |
A. N. Kosarev, V. V. Chaldyshev, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, “Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1519–1526 ; Semiconductors, 50:11 (2016), 1499–1505 |
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1988 |
| 20. |
G. M. Gusev, Z. D. Kvon, D. I. Lubyshev, V. P. Migal', V. N. Ovsyuk, V. V. Preobrazhenskii, S. I. Stenin, “Anisotropic negative magnetoresistance of quasi two-dimensional $\delta$-doped $\mathrm{GaAs}$ layers”, Fizika Tverdogo Tela, 30:10 (1988), 3148–3150 |
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