Abstract:
Quantum dots of indium gallium arsenide buried in a thin layer of aluminum gallium arsenide were grown by means of molecular-beam epitaxy. The influence of silver nanoparticles grown on the surface of the semiconductor structure by vacuum thermal evaporation on photoluminescence of quantum dots was investigated. Photoluminescence spectra of quantum dots were obtained under stationary and pulsed excitation. The influence of silver nanoparticles exhibiting plasmon resonances on spectral distribution and kinetics of luminescence of the epitaxial quantum dots was studied.
This investigation was supported by the Russian Foundation for Basic Research (projects nos. 16-02-00932 and 17-02-01168), the program “Modern Problems of Photonics, Probing of Inhomogeneous Media and Materials” of the Presidium of the Russian Academy of Sciences, and DFG ICRC 160 (project C5).
Citation:
A. N. Kosarev, V. V. Chaldyshev, A. A. Kondikov, T. A. Vartanyan, N. A. Toropov, I. A. Gladskikh, P. V. Gladskikh, I. Akimov, M. Bayer, V. V. Preobrazhenskii, M. A. Putyato, B. R. Semyagin, “Epitaxial InGaAs quantum dots in Al0.29Ga0.71 As matrix: intensity and kinetics of luminescence in the near field of silver nanoparticles”, Optics and Spectroscopy, 126:5 (2019), 573–577; Optics and Spectroscopy, 126:5 (2019), 492–496
\Bibitem{KosChaKon19}
\by A.~N.~Kosarev, V.~V.~Chaldyshev, A.~A.~Kondikov, T.~A.~Vartanyan, N.~A.~Toropov, I.~A.~Gladskikh, P.~V.~Gladskikh, I.~Akimov, M.~Bayer, V.~V.~Preobrazhenskii, M.~A.~Putyato, B.~R.~Semyagin
\paper Epitaxial InGaAs quantum dots in Al$_{0.29}$Ga$_{0.71}$ As matrix: intensity and kinetics of luminescence in the near field of silver nanoparticles
\jour Optics and Spectroscopy
\yr 2019
\vol 126
\issue 5
\pages 573--577
\mathnet{http://mi.mathnet.ru/os711}
\crossref{https://doi.org/10.21883/OS.2019.05.47655.382-18}
\elib{https://elibrary.ru/item.asp?id=39133863}
\transl
\jour Optics and Spectroscopy
\yr 2019
\vol 126
\issue 5
\pages 492--496
\crossref{https://doi.org/10.1134/S0030400X19050151}
Linking options:
https://www.mathnet.ru/eng/os711
https://www.mathnet.ru/eng/os/v126/i5/p573
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L. A. Snigirev, V. I. Ushanov, A. A. Ivanov, N. A. Bert, D. A. Kirilenko, M. A. Yagovkina, V. V. Preobrazhenskii, M. A. Putyato, B. P. Semyagin, I. A. Kasatkin, V. V. Chaldyshev, “Structure and Optical Properties of a Composite AsSb–Al0.6Ga0.4As0.97Sb0.03 Metamaterial”, Semiconductors, 57:13 (2023), 615
Vyacheslav M. Silkin, Sergey V. Eremeev, Vitalii I. Ushanov, Vladimir V. Chaldyshev, “Localized Surface Plasmon Resonance in Metamaterials Composed of As1-zSbz Semimetal Nanoparticles in AlxGa1-xAs1-ySby Semiconductor Matrix”, Nanomaterials, 13:8 (2023), 1355
Nikolay Bert, Vitaliy Ushanov, Leonid Snigirev, Demid Kirilenko, Vladimir Ulin, Maria Yagovkina, Valeriy Preobrazhenskii, Mikhail Putyato, Boris Semyagin, Igor Kasatkin, Vladimir Chaldyshev, “Metal-Semiconductor AsSb-Al0.6Ga0.4As0.97Sb0.03 Metamaterial”, Materials, 15:21 (2022), 7597
N.E. Koksal, M. Sbeta, A. Yildiz, “Ag nanoparticles-decorated Al-Ga co-doped ZnO based photodiodes”, Optik, 224 (2020), 165523