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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 5, Page 525 (Mi phts5851)  

This article is cited in 2 scientific papers (total in 2 papers)

XXV International Symposium ''Nanostructures: Physics and Technology'', Saint Petersburg, June 26-30, 2017
Nanostructure Technology

Kinetics of structural changes on GaSb(001) singular and vicinal surfaces during the UHV annealing

A. V. Vasev, M. A. Putyato, V. V. Preobrazhenskii, A. K. Bakarov, A. I. Toropov

Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, 630090 Novosibirsk, Russia
Full-text PDF (27 kB) Citations (2)
Abstract: The dynamics of processes of antimony desorption was investigated on the singular and vicinal GaSb(001) surface by RHEED method. The role of the terraces edges was determined during antimony evaporation in Langmuir desorption mode. It is shown that the structural transition (2 $\times$ 5) $\to$ (1 $\times$ 3) is a complex of two transitions–order $\to$ disorder and disorder $\to$ order. The influence of the degree of surface miscut from the singular face on the dimension of the transition (2 $\times$ 5) $\to$ DO was studied. The activation energies of structural transitions ex(2 $\times$ 5) $\to$ (2 $\times$ 5), (2 $\times$ 5) $\to$ DO and DO $\to$ (1 $\times$ 3) on singular and vicinal faces GaSb(001) were determined.
Funding agency Grant number
Russian Science Foundation 16-12-00023
This work was supported by Russian Science Foundation, grant No 16-12-00023.
English version:
Semiconductors, 2018, Volume 52, Issue 5, Pages 664–666
DOI: https://doi.org/10.1134/S1063782618050354
Bibliographic databases:
Document Type: Article
Language: English
Citation: A. V. Vasev, M. A. Putyato, V. V. Preobrazhenskii, A. K. Bakarov, A. I. Toropov, “Kinetics of structural changes on GaSb(001) singular and vicinal surfaces during the UHV annealing”, Fizika i Tekhnika Poluprovodnikov, 52:5 (2018), 525; Semiconductors, 52:5 (2018), 664–666
Citation in format AMSBIB
\Bibitem{VasPutPre18}
\by A.~V.~Vasev, M.~A.~Putyato, V.~V.~Preobrazhenskii, A.~K.~Bakarov, A.~I.~Toropov
\paper Kinetics of structural changes on GaSb(001) singular and vicinal surfaces during the UHV annealing
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 5
\pages 525
\mathnet{http://mi.mathnet.ru/phts5851}
\elib{https://elibrary.ru/item.asp?id=32740389}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 5
\pages 664--666
\crossref{https://doi.org/10.1134/S1063782618050354}
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  • https://www.mathnet.ru/eng/phts/v52/i5/p525
  • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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