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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 2, Pages 139–146
DOI: https://doi.org/10.21883/FTP.2021.02.50500.9529 (Mi phts5078) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Formation of InAs/GaP heterostructures with quantum wells on silicon substrates by molecular beam epitaxy

D. S. Abramkinab, M. O. Petrushkova, E. A. Emelyanova, A. V. Nenasheva, M. Yu. Yesina, A. V. Vaseva, M. A. Putyatoa, D. B. Bogomolova, A. K. Gutakovskiiab, V. V. Preobrazhenskiia

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia
b Novosibirsk State University, Novosibirsk, Russia
Full-text PDF (2097 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2021.02.50500.9529
Abstract: Possibility of formation of pseudomorphous quantum well consisting of InGaAsP quaternary alloy during InAs deposition on GaP/Si epitaxial film surface with developed relief is demonstrated. Investigations of quantum well were performed by transmission electron microscopy and spectroscopy of cw photoluminescence. The appearance of quantum well segments of 2 types with different width and composition InGaAsP is demonstrated. Width increasing is accompanied by decreasing of In and As atoms fraction. Lateral sizes of quantum well segments are not lower than 20 nm. Different photoluminescence bands are corresponds to quantum well segments. Observed phenomenon are explained in the framework of suggestion about strain induced surface reorganization during InAs heteroepitaxy on terraced GaP surface.
Keywords: molecular beam epitaxy, InAs/GaP quantum wells, AIII-BV on silicon, surface morphology, photoluminescence, material intermixing, elastic deformation.
Funding agency Grant number
Russian Foundation for Basic Research 19-42-543009
Russian Science Foundation 19-72-30023
The study was supported by the Russian Foundation for Basic Research and the Ministry of Science and Innovation Policy of Novosibirsk Region, project no. 19-42-543009. The part of the study concerned with HRTEM measurements were supported by the Russian Science Foundation, project 19-72-30023.
Received: 07.10.2020
Revised: 13.10.2020
Accepted: 13.10.2020
English version:
Semiconductors, 2021, Volume 55, Issue 2, Pages 194–201
DOI: https://doi.org/10.1134/S1063782621020020
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. S. Abramkin, M. O. Petrushkov, E. A. Emelyanov, A. V. Nenashev, M. Yu. Yesin, A. V. Vasev, M. A. Putyato, D. B. Bogomolov, A. K. Gutakovskii, V. V. Preobrazhenskii, “Formation of InAs/GaP heterostructures with quantum wells on silicon substrates by molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 139–146; Semiconductors, 55:2 (2021), 194–201
Citation in format AMSBIB
\Bibitem{AbrPetEme21}
\by D.~S.~Abramkin, M.~O.~Petrushkov, E.~A.~Emelyanov, A.~V.~Nenashev, M.~Yu.~Yesin, A.~V.~Vasev, M.~A.~Putyato, D.~B.~Bogomolov, A.~K.~Gutakovskii, V.~V.~Preobrazhenskii
\paper Formation of InAs/GaP heterostructures with quantum wells on silicon substrates by molecular beam epitaxy
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 2
\pages 139--146
\mathnet{http://mi.mathnet.ru/phts5078}
\crossref{https://doi.org/10.21883/FTP.2021.02.50500.9529}
\elib{https://elibrary.ru/item.asp?id=44859598}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 2
\pages 194--201
\crossref{https://doi.org/10.1134/S1063782621020020}
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