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This article is cited in 4 scientific papers (total in 4 papers)
Solid-State Electronics
A lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure
M. A. Putyatoa, N. A. Valishevaa, M. O. Petrushkova, V. V. Preobrazhenskiia, I. B. Chistokhina, B. R. Semyagina, E. A. Emelyanova, A. V. Vaseva, A. F. Skachkovb, G. I. Yurkob, I. I. Nesterenkob a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b PAO Saturn, Krasnodar, Russia
Abstract:
Problems arising in fabrication of lightweight flexible solar cells based on heteroepitaxial A$^{\mathrm{III}}$B$^{\mathrm{V}}$ structures with substrate etching are discussed. Possible solutions are proposed. A tandem lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure was fabricated. Its mass and dimensional characteristics were determined, and bending tests were performed. The specific mass of this solar cell was 0.51 kg/m$^2$, and the allowable bend radius was 36 mm. Its current–voltage curves were measured for the AM0 and AM1.5D spectra at 28.6$^\circ$C and 25$^\circ$C, respectively. The cell efficiency was found to be 23.1% and 28.3%.
Received: 27.12.2018 Revised: 27.12.2018 Accepted: 07.02.2019
Citation:
M. A. Putyato, N. A. Valisheva, M. O. Petrushkov, V. V. Preobrazhenskii, I. B. Chistokhin, B. R. Semyagin, E. A. Emelyanov, A. V. Vasev, A. F. Skachkov, G. I. Yurko, I. I. Nesterenko, “A lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure”, Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019), 1071–1078; Tech. Phys., 64:7 (2019), 1010–1016
Linking options:
https://www.mathnet.ru/eng/jtf5570 https://www.mathnet.ru/eng/jtf/v89/i7/p1071
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