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Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 7, Pages 1071–1078
DOI: https://doi.org/10.21883/JTF.2019.07.47802.438-18 (Mi jtf5570) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Solid-State Electronics

A lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure

M. A. Putyatoa, N. A. Valishevaa, M. O. Petrushkova, V. V. Preobrazhenskiia, I. B. Chistokhina, B. R. Semyagina, E. A. Emelyanova, A. V. Vaseva, A. F. Skachkovb, G. I. Yurkob, I. I. Nesterenkob

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b PAO Saturn, Krasnodar, Russia
Full-text PDF (907 kB) Citations (4)
DOI: https://doi.org/10.21883/JTF.2019.07.47802.438-18
Abstract: Problems arising in fabrication of lightweight flexible solar cells based on heteroepitaxial A$^{\mathrm{III}}$B$^{\mathrm{V}}$ structures with substrate etching are discussed. Possible solutions are proposed. A tandem lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure was fabricated. Its mass and dimensional characteristics were determined, and bending tests were performed. The specific mass of this solar cell was 0.51 kg/m$^2$, and the allowable bend radius was 36 mm. Its current–voltage curves were measured for the AM0 and AM1.5D spectra at 28.6$^\circ$C and 25$^\circ$C, respectively. The cell efficiency was found to be 23.1% and 28.3%.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation ÑÏ-749.2016.1
This study was supported by SP-749.2016.1.
Received: 27.12.2018
Revised: 27.12.2018
Accepted: 07.02.2019
English version:
Technical Physics, 2019, Volume 64, Issue 7, Pages 1010–1016
DOI: https://doi.org/10.1134/S106378421907020X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. A. Putyato, N. A. Valisheva, M. O. Petrushkov, V. V. Preobrazhenskii, I. B. Chistokhin, B. R. Semyagin, E. A. Emelyanov, A. V. Vasev, A. F. Skachkov, G. I. Yurko, I. I. Nesterenko, “A lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure”, Zhurnal Tekhnicheskoi Fiziki, 89:7 (2019), 1071–1078; Tech. Phys., 64:7 (2019), 1010–1016
Citation in format AMSBIB
\Bibitem{PutValPet19}
\by M.~A.~Putyato, N.~A.~Valisheva, M.~O.~Petrushkov, V.~V.~Preobrazhenskii, I.~B.~Chistokhin, B.~R.~Semyagin, E.~A.~Emelyanov, A.~V.~Vasev, A.~F.~Skachkov, G.~I.~Yurko, I.~I.~Nesterenko
\paper A lightweight flexible solar cell based on a heteroepitaxial InGaP/GaAs structure
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 89
\issue 7
\pages 1071--1078
\mathnet{http://mi.mathnet.ru/jtf5570}
\crossref{https://doi.org/10.21883/JTF.2019.07.47802.438-18}
\elib{https://elibrary.ru/item.asp?id=41130851}
\transl
\jour Tech. Phys.
\yr 2019
\vol 64
\issue 7
\pages 1010--1016
\crossref{https://doi.org/10.1134/S106378421907020X}
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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