Diffusion blurring of GaAs quantum wells grown at low temperature

The processes of the diffusion blurring of a periodic system of GaAs quantum wells separated by AlGaAs barriers are studied by photoluminescence spectroscopy. The system is grown by molecular-beam epitaxy at a low temperature (200$^{\circ}$C) and additionally doped with Sb and P isovalent impurities. Postgrowth annealing at the temperature 750$^{\circ}$C for 30 min induces an increase in the energy corresponding to the photoluminescence peak of the $e$1–$hh$ 1 exciton state in quantum wells because of blurring of the epitaxial GaAs/AlGaAs interfaces due to enhanced Al–Ga interdiffusion in the cation sublattice. For the Al concentration profile defined by linear diffusion into quantum wells, the Schrödinger equation for electrons and holes is solved. It is found that the experimentally observed energy position of the photoluminescence peak corresponds to the Al–Ga interdiffusion length 3.4 nm and to the effective diffusion coefficient 6.3 $\times$ 10$^{-17}$ cm$^2$ s$^{-1}$ at the temperature 750$^{\circ}$C. This value is found to be close to the corresponding value for GaAs quantum wells grown at low temperatures without additional doping with Sb and P impurities. From the results obtained in the study, it is possible to conclude that enhanced As–Sb and As–P interdiffusion in the anion sublattice only slightly influences the processes of Al–Ga interdiffusion in the cation sublattice.