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This article is cited in 2 scientific papers (total in 2 papers)
Zinc diffusion into InP via a narrow gap from a planar Zn$_{3}$P$_{2}$-based source
M. O. Petrushkov, M. A. Putyato, I. B. Chistokhin, B. R. Semyagin, E. A. Emelyanov, M. Yu. Yesin, T. A. Gavrilova, A. V. Vasev, V. V. Preobrazhenskii Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Abstract:
An original technology of zinc diffusion into InP via a narrow gap is described, which allows reproducible formation of $p$–$n$ junctions with preset depth of doping and retained surface morphology of the doped layers. Using the proposed method, desired charge carrier distribution profiles in Zn-doped InP layers were obtained. It has been experimentally confirmed that the method of cross-sectional scanning electron microscopy allows to precision measure of the zinc diffusion depth.
Received: 08.12.2017
Citation:
M. O. Petrushkov, M. A. Putyato, I. B. Chistokhin, B. R. Semyagin, E. A. Emelyanov, M. Yu. Yesin, T. A. Gavrilova, A. V. Vasev, V. V. Preobrazhenskii, “Zinc diffusion into InP via a narrow gap from a planar Zn$_{3}$P$_{2}$-based source”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:14 (2018), 19–25; Tech. Phys. Lett., 44:7 (2018), 612–614
Linking options:
https://www.mathnet.ru/eng/pjtf5745 https://www.mathnet.ru/eng/pjtf/v44/i14/p19
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