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This article is cited in 7 scientific papers (total in 7 papers)
XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019
GaAs/GaP quantum-well heterostructures grown on Si substrates
D. S. Abramkinab, M. O. Petrushkova, M. A. Putyatoa, B. R. Semyagina, E. A. Emelyanova, V. V. Preobrazhenskiia, A. K. Gutakovskiiab, T. S. Shamirzaevabc a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Ural Federal University, Yekaterinburg, Russia
Abstract:
Molecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite the relatively high concentration of nonradiative-recombination centers in GaP/Si layers, GaAs/GaP quantum-well heterostructures grown on GaP/Si hybrid substrates are highly competitive in terms of efficiency and temperature stability of luminescence to similar heterostructures grown on lattice-matched GaP substrates.
Keywords:
hybrid substrates, photoluminescence, GaP on Si, molecular-beam epitaxy, quantum wells.
Received: 24.04.2019 Revised: 29.04.2019 Accepted: 29.04.2019
Citation:
D. S. Abramkin, M. O. Petrushkov, M. A. Putyato, B. R. Semyagin, E. A. Emelyanov, V. V. Preobrazhenskii, A. K. Gutakovskii, T. S. Shamirzaev, “GaAs/GaP quantum-well heterostructures grown on Si substrates”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1167–1171; Semiconductors, 53:9 (2019), 1143–1147
Linking options:
https://www.mathnet.ru/eng/phts5396 https://www.mathnet.ru/eng/phts/v53/i9/p1167
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