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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 9, Pages 1167–1171
DOI: https://doi.org/10.21883/FTP.2019.09.48118.01 (Mi phts5396) 		 
This article is cited in 7 scientific papers (total in 7 papers)

XXIII International symposium ''Nanophysics and Nanoelectronics'', Nizhny Novgorod, March 11–14, 2019

GaAs/GaP quantum-well heterostructures grown on Si substrates

D. S. Abramkinab, M. O. Petrushkova, M. A. Putyatoa, B. R. Semyagina, E. A. Emelyanova, V. V. Preobrazhenskiia, A. K. Gutakovskiiab, T. S. Shamirzaevabc

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Ural Federal University, Yekaterinburg, Russia
Full-text PDF (508 kB) Citations (7)
DOI: https://doi.org/10.21883/FTP.2019.09.48118.01
Abstract: Molecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite the relatively high concentration of nonradiative-recombination centers in GaP/Si layers, GaAs/GaP quantum-well heterostructures grown on GaP/Si hybrid substrates are highly competitive in terms of efficiency and temperature stability of luminescence to similar heterostructures grown on lattice-matched GaP substrates.
Keywords: hybrid substrates, photoluminescence, GaP on Si, molecular-beam epitaxy, quantum wells.
Funding agency Grant number
Russian Science Foundation 17-72-10038
The study was supported by the Russian Science Foundation, project no. 17-72-10038.
Received: 24.04.2019
Revised: 29.04.2019
Accepted: 29.04.2019
English version:
Semiconductors, 2019, Volume 53, Issue 9, Pages 1143–1147
DOI: https://doi.org/10.1134/S1063782619090021
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. S. Abramkin, M. O. Petrushkov, M. A. Putyato, B. R. Semyagin, E. A. Emelyanov, V. V. Preobrazhenskii, A. K. Gutakovskii, T. S. Shamirzaev, “GaAs/GaP quantum-well heterostructures grown on Si substrates”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1167–1171; Semiconductors, 53:9 (2019), 1143–1147
Citation in format AMSBIB
\Bibitem{AbrPetPut19}
\by D.~S.~Abramkin, M.~O.~Petrushkov, M.~A.~Putyato, B.~R.~Semyagin, E.~A.~Emelyanov, V.~V.~Preobrazhenskii, A.~K.~Gutakovskii, T.~S.~Shamirzaev
\paper GaAs/GaP quantum-well heterostructures grown on Si substrates
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 9
\pages 1167--1171
\mathnet{http://mi.mathnet.ru/phts5396}
\crossref{https://doi.org/10.21883/FTP.2019.09.48118.01}
\elib{https://elibrary.ru/item.asp?id=41129853}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 9
\pages 1143--1147
\crossref{https://doi.org/10.1134/S1063782619090021}
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