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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 12, Pages 1289–1295
DOI: https://doi.org/10.21883/FTP.2020.12.50227.9496 (Mi phts5102) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Non-electronic properties of semiconductors (atomic structure, diffusion)

Effect of the crystallographic orientation of GaSb films on their structural properties during MBE heteroepitaxy on vicinal Si(001) substrates

M. O. Petrushkova, D. S. Abramkinab, E. A. Emelyanova, M. A. Putyatoa, A. V. Vaseva, I. D. Loshkareva, M. Yu. Yesina, O. S. Komkovc, D. D. Firsovc, V. V. Preobrazhenskiia

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Saint Petersburg Electrotechnical University "LETI"
Full-text PDF (1185 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2020.12.50227.9496
Abstract: GaSb films were grown by molecular beam epitaxy using AlSb/As/Si transition layers on vicinal Si (001) substrates deflected 6$^\circ$ to the (111) plane. The influence of the GaSb films crystallographic orientation on their structural properties and surface morphology is investigated. It was found that GaSb(00$\bar1$)/Si films are characterized by better structural perfection, lower concentration of point defects and more planar and isotropic surface topography, compared with GaSb(001) films. Possible reason for the observed differences between GaSb films with different orientations is increased density of antiphase domains in GaSb(001) films. The morphological features of the grown films are caused by the terraces edges basically and by the anisotropy of the incorporation of Ga adatoms into the terraces edges, to a lesser extent.
Keywords: molecular beam epitaxy, GaSb on Si (001), crystallographic orientation of the film, structural perfection, surface morphology.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 0306-2020-0011
This work was supported by the state assignment no. 0306-2020-0011.
Received: 03.08.2020
Revised: 10.08.2020
Accepted: 10.08.2020
English version:
Semiconductors, 2020, Volume 54, Issue 12, Pages 1548–1554
DOI: https://doi.org/10.1134/S1063782620120295
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: M. O. Petrushkov, D. S. Abramkin, E. A. Emelyanov, M. A. Putyato, A. V. Vasev, I. D. Loshkarev, M. Yu. Yesin, O. S. Komkov, D. D. Firsov, V. V. Preobrazhenskii, “Effect of the crystallographic orientation of GaSb films on their structural properties during MBE heteroepitaxy on vicinal Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1289–1295; Semiconductors, 54:12 (2020), 1548–1554
Citation in format AMSBIB
\Bibitem{PetAbrEme20}
\by M.~O.~Petrushkov, D.~S.~Abramkin, E.~A.~Emelyanov, M.~A.~Putyato, A.~V.~Vasev, I.~D.~Loshkarev, M.~Yu.~Yesin, O.~S.~Komkov, D.~D.~Firsov, V.~V.~Preobrazhenskii
\paper Effect of the crystallographic orientation of GaSb films on their structural properties during MBE heteroepitaxy on vicinal Si(001) substrates
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 12
\pages 1289--1295
\mathnet{http://mi.mathnet.ru/phts5102}
\crossref{https://doi.org/10.21883/FTP.2020.12.50227.9496}
\elib{https://elibrary.ru/item.asp?id=44368062}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 12
\pages 1548--1554
\crossref{https://doi.org/10.1134/S1063782620120295}
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    • This publication is cited in the following 3 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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