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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 1, Pages 40–44
DOI: https://doi.org/10.21883/FTP.2017.01.43993.8244 (Mi phts6255) 		 
This article is cited in 3 scientific papers (total in 3 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Cyclotron resonance of Dirac fermions in InAs/GaSb/InAs quantum wells

S. S. Krishtopenkoab, A. V. Ikonnikovac, K. V. Marem'yaninac, L. S. Bovkuna, K. E. Spirina, A. M. Kadykovab, M. Marcinkiewiczb, S. Ruffenachb, C. Consejob, F. Teppeb, W. Knapb, B. R. Semyagind, M. A. Putyatod, E. A. Emelyanovd, V. V. Preobrazhenskiid, V. I. Gavrilenkoac

a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
b Laboratoire Charles Coulomb, Universite Montpellier II, Montpellier, France
c Lobachevsky State University of Nizhny Novgorod
d Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (353 kB) Citations (3)
DOI: https://doi.org/10.21883/FTP.2017.01.43993.8244
Abstract: The band structure of three-layer symmetric InAs/GaSb/InAs quantum wells confined between AlSb barriers is analyzed theoretically. It is shown that, depending on the thicknesses of the InAs and GaSb layers, a normal band structure, a gapless state with a Dirac cone at the center of the Brillouin zone, or inverted band structure (two-dimensional topological insulator) can be realized in this system. Measurements of the cyclotron resonance in structures with gapless band spectra carried out for different electron concentrations confirm the existence of massless Dirac fermions in InAs/GaSb/InAs quantum wells.
Received: 22.03.2016
Accepted: 28.03.2016
English version:
Semiconductors, 2017, Volume 51, Issue 1, Pages 38–42
DOI: https://doi.org/10.1134/S1063782617010109
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. S. Krishtopenko, A. V. Ikonnikov, K. V. Marem'yanin, L. S. Bovkun, K. E. Spirin, A. M. Kadykov, M. Marcinkiewicz, S. Ruffenach, C. Consejo, F. Teppe, W. Knap, B. R. Semyagin, M. A. Putyato, E. A. Emelyanov, V. V. Preobrazhenskii, V. I. Gavrilenko, “Cyclotron resonance of Dirac fermions in InAs/GaSb/InAs quantum wells”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 40–44; Semiconductors, 51:1 (2017), 38–42
Citation in format AMSBIB
\Bibitem{KriIkoMar17}
\by S.~S.~Krishtopenko, A.~V.~Ikonnikov, K.~V.~Marem'yanin, L.~S.~Bovkun, K.~E.~Spirin, A.~M.~Kadykov, M.~Marcinkiewicz, S.~Ruffenach, C.~Consejo, F.~Teppe, W.~Knap, B.~R.~Semyagin, M.~A.~Putyato, E.~A.~Emelyanov, V.~V.~Preobrazhenskii, V.~I.~Gavrilenko
\paper Cyclotron resonance of Dirac fermions in InAs/GaSb/InAs quantum wells
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 1
\pages 40--44
\mathnet{http://mi.mathnet.ru/phts6255}
\crossref{https://doi.org/10.21883/FTP.2017.01.43993.8244}
\elib{https://elibrary.ru/item.asp?id=28969403}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 1
\pages 38--42
\crossref{https://doi.org/10.1134/S1063782617010109}
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    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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