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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
A. A. Ivanov, V. V. Chaldyshev, E. E. Zavarin, A. V. Sakharov, V. V. Lundin, A. F. Tsatsul'nikov, “Resonant light reflection from an optical lattice of excitons formed by 100 InGaN quantum wells”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 733–737   |
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| 2. |
L. K. Markov, S. A. Kukushkin, I. P. Smirnova, A. S. Pavluchenko, A. S. Grashchenko, A. V. Osipov, G. V. Svyatets, A. E. Nikolaev, A. V. Sakharov, V. V. Lundin, A. F. Tsatsul'nikov, “A light-emitting diode based on alingan heterostructures grown on SiC/Si substrates and its fabrication technology”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:18 (2021), 3–6 |
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| 3. |
N. A. Cherkashin, A. V. Sakharov, A. E. Nikolaev, V. V. Lundin, S. O. Usov, V. M. Ustinov, A. S. Grashchenko, S. A. Kukushkin, A. V. Osipov, A. F. Tsatsul'nikov, “Peculiarities of epitaxial growth of III – N led heterostructures on SiC/Si substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 47:15 (2021), 15–18 ; Tech. Phys. Lett., 47:10 (2021), 753–756 |
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2020 |
| 4. |
M. I. Mitrofanov, G. V. Voznyuk, S. N. Rodin, W. V. Lundin, V. P. Evtikhiev, A. F. Tsatsulnikov, M. A. Kaliteevski, “Calculation of the Ga+ FIB ion dose distribution by SEM image”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1390 ; Semiconductors, 54:12 (2020), 1682–1684 |
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| 5. |
A. V. Sakharov, V. V. Lundin, E. E. Zavarin, S. O. Usov, P. N. Brunkov, A. F. Tsatsul'nikov, “The influence of reactor pressure on the properties of GaN layers grown by MOVPE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020), 3–6 ; Tech. Phys. Lett., 46:12 (2020), 1211–1214 |
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2019 |
| 6. |
S. N. Rodin, V. V. Lundin, A. F. Tsatsul'nikov, A. V. Sakharov, S. O. Usov, M. I. Mitrofanov, I. V. Levitskii, V. P. Evtikhiev, M. A. Kaliteevski, “GaN selective epitaxy in sub-micron windows with different depths formed by ion beam nanolithography”, Fizika Tverdogo Tela, 61:12 (2019), 2333 ; Phys. Solid State, 61:12 (2019), 2335–2337 |
| 7. |
V. V. Lundin, A. V. Sakharov, E. E. Zavarin, D. A. Zakgeim, E. Yu. Lundina, P. N. Brunkov, A. F. Tsatsul'nikov, “Insulating GaN epilayers co-doped with iron and carbon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 36–39 ; Tech. Phys. Lett., 45:7 (2019), 723–726 |
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2018 |
| 8. |
V. V. Lundin, A. F. Tsatsul'nikov, S. N. Rodin, A. V. Sakharov, S. O. Usov, M. I. Mitrofanov, Ya. V. Levitskii, V. P. Evtikhiev, “Selective epitaxial growth of III–N structures using ion-beam nanolithography”, Fizika i Tekhnika Poluprovodnikov, 52:10 (2018), 1237–1243 ; Semiconductors, 52:10 (2018), 1357–1362 |
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| 9. |
V. V. Lundin, A. V. Sakharov, E. E. Zavarin, D. A. Zakgeim, A. E. Nikolaev, P. N. Brunkov, M. A. Yagovkina, A. F. Tsatsul'nikov, “The effect of the method by which a high-resistivity GaN buffer layer is formed on properties of InAlN/GaN and AlGaN/GaN heterostructures with 2D electron gas”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018), 51–58 ; Tech. Phys. Lett., 44:7 (2018), 577–580 |
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2017 |
| 10. |
G. M. Savchenko, V. V. Dyudelev, V. V. Lundin, A. V. Sakharov, A. F. Tsatsul'nikov, E. A. Kognovitskaya, S. N. Losev, A. G. Deryagin, V. I. Kuchinskii, N. S. Averkiev, G. S. Sokolovskii, “Photonic-crystal waveguide for the second-harmonic generation”, Fizika Tverdogo Tela, 59:9 (2017), 1680–1683 ; Phys. Solid State, 59:9 (2017), 1702–1705 |
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| 11. |
V. V. Lundin, S. N. Rodin, A. V. Sakharov, E. Yu. Lundina, S. O. Usov, Yu. M. Zadiranov, S. I. Troshkov, A. F. Tsatsul'nikov, “InGaN/GaN light-emitting diode microwires of submillimeter length”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 101–104 ; Semiconductors, 51:1 (2017), 100–103 |
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2016 |
| 12. |
E. A. Tarasova, E. S. Obolenskaya, A. V. Hananova, S. V. Obolensky, V. E. Zemlyakov, V. I. Egorkin, A. V. Nezhentsev, A. V. Sakharov, A. F. Tsatsul'nikov, V. V. Lundin, E. E. Zavarin, G. V. Medvedev, “Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors”, Fizika i Tekhnika Poluprovodnikov, 50:12 (2016), 1599–1604 ; Semiconductors, 50:12 (2016), 1574–1578 |
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| 13. |
A. S. Bolshakov, V. V. Chaldyshev, E. E. Zavarin, A. V. Sakharov, V. V. Lundin, A. F. Tsatsul'nikov, “Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells”, Fizika i Tekhnika Poluprovodnikov, 50:11 (2016), 1451–1454 ; Semiconductors, 50:11 (2016), 1431–1434 |
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| 14. |
A. F. Tsatsul'nikov, V. V. Lundin, E. E. Zavarin, M. A. Yagovkina, A. V. Sakharov, S. O. Usov, V. E. Zemlyakov, V. I. Egorkin, K. A. Bulashevich, S. Yu. Karpov, V. M. Ustinov, “Effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1401–1407 ; Semiconductors, 50:10 (2016), 1383–1389 |
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| 15. |
A. F. Tsatsul'nikov, V. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, M. A. Yagovkina, V. M. Ustinov, N. A. Cherkashin, “Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1263–1269 ; Semiconductors, 50:9 (2016), 1241–1247 |
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| 16. |
V. G. Tikhomirov, V. E. Zemlyakov, V. V. Volkov, Ya. M. Parnes, V. N. V’yuginov, V. V. Lundin, A. V. Sakharov, E. E. Zavarin, A. F. Tsatsul'nikov, N. A. Cherkashin, M. N. Mizerov, V. M. Ustinov, “Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 245–249 ; Semiconductors, 50:2 (2016), 244–248 |
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| 17. |
V. V. Lundin, E. E. Zavarin, P. N. Brunkov, M. A. Yagovkina, A. V. Sakharov, M. A. Sinicin, B. Ya. Ber, D. Yu. Kazantsev, A. F. Tsatsul'nikov, “Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016), 85–91 ; Tech. Phys. Lett., 42:5 (2016), 539–542 |
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| 18. |
V. V. Lundin, E. E. Zavarin, P. N. Brunkov, M. A. Yagovkina, S. I. Troshkov, A. V. Sakharov, A. E. Nikolaev, A. F. Tsatsul'nikov, “The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:8 (2016), 86–93 ; Tech. Phys. Lett., 42:4 (2016), 431–434 |
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2001 |
| 19. |
I. L. Krestnikov, V. V. Lundin, A. V. Sakharov, D. A. Bedarev, E. E. Zavarin, Yu. G. Musikhin, N. M. Shmidt, A. F. Tsatsul'nikov, A. S. Usikov, N. N. Ledentsov, Zh. I. Alferov, “Heterostructures based on nitrides of group III elements: technical processes, properties, and light-emitting devices”, UFN, 171:8 (2001), 857–858 ; Phys. Usp., 44:8 (2001), 815–816 |
1
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| 20. |
V. M. Ustinov, N. A. Maleev, A. E. Zhukov, A. R. Kovsh, A. V. Sakharov, B. V. Volovik, A. F. Tsatsul'nikov, N. N. Ledentsov, Zh. I. Alferov, J. A. Lott, D. Bimberg, “Vertical-cavity emitting devices with quantum-dot structures”, UFN, 171:8 (2001), 855–857 ; Phys. Usp., 44:8 (2001), 813–815 |
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1991 |
| 21. |
A. A. Gutkin, V. E. Sedov, A. F. Tsatsul'nikov, “Ôîòîëþìèíåñöåíöèÿ, ñâÿçàííàÿ ñ öåíòðàìè Au$_{\text{Ga}}$ â GaAs : Au”, Fizika i Tekhnika Poluprovodnikov, 25:3 (1991), 508–512 |
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1990 |
| 22. |
N. S. Averkiev, A. A. Gutkin, E. B. Osipov, V. E. Sedov, A. F. Tsatsul'nikov, “An evaluation of the static distortion and nonlinearity of Jahn-Teller interaction for the deep $\mathrm{Cu}_{Ga}$ center in $\mathrm{GaAs}$”, Fizika Tverdogo Tela, 32:9 (1990), 2667–2676 |
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1988 |
| 23. |
N. S. Averkiev, A. A. Gutkin, E. B. Osipov, V. E. Sedov, A. F. Tsatsul'nikov, “Ordering dynamics of $\mathrm{Cu}_{Ga}$ Jahn-Teller centers in $\mathrm{GaAs}$ under $[001]$ compression”, Fizika Tverdogo Tela, 30:5 (1988), 1459–1465 |
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