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This article is cited in 2 scientific papers (total in 2 papers)
The influence of reactor pressure on the properties of GaN layers grown by MOVPE
A. V. Sakharova, V. V. Lundina, E. E. Zavarina, S. O. Usovb, P. N. Brunkova, A. F. Tsatsul'nikovb a Ioffe Institute, St. Petersburg
b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
Abstract:
We have studied the growth of GaN layers by the metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates at various reactor pressures, including ones above the atmospheric level. It is established that the epitaxial growth at higher pressures does not affect the crystalline perfection of epilayers, their electron mobility, and background impurity level, but leads to the formation of GaN surface with lower lateral scale of inhomogeneities. In addition, the reactor pressure influences the ratio of edge and impurity lines in the photoluminescence spectra and leakage current level in reversely biased Schottky barriers.
Keywords:
metalorganic vapor phase epitaxy, Group-III nitrides, morphology, luminescence.
Received: 18.08.2020 Revised: 03.09.2020 Accepted: 03.09.2020
Citation:
A. V. Sakharov, V. V. Lundin, E. E. Zavarin, S. O. Usov, P. N. Brunkov, A. F. Tsatsul'nikov, “The influence of reactor pressure on the properties of GaN layers grown by MOVPE”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 46:24 (2020), 3–6; Tech. Phys. Lett., 46:12 (2020), 1211–1214
Linking options:
https://www.mathnet.ru/eng/pjtf4903 https://www.mathnet.ru/eng/pjtf/v46/i24/p3
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