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This article is cited in 4 scientific papers (total in 4 papers)
Insulating GaN epilayers co-doped with iron and carbon
V. V. Lundina, A. V. Sakharova, E. E. Zavarina, D. A. Zakgeima, E. Yu. Lundinaa, P. N. Brunkova, A. F. Tsatsul'nikovb a Ioffe Institute, St. Petersburg
b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
Abstract:
The morphology and electrical properties of doped semi-insulating gallium nitride (GaN) epilayers have been studied. It was found that doping-induced improvement of the insulating properties of GaN epilayers with increased level of doping with carbon or iron is limited by the accompanying deterioration of surface morphology. The character of impurity-related morphology development is different for the two dopants. It is established that the co-doping with carbon and iron allows planarity of the GaN surface to be retained along with a significant improvement of insulating properties of epilayers.
Keywords:
high-electron-mobility transistor, HEMT, semi-insulating gallium nitride, leak current, co-doping.
Received: 20.02.2019 Revised: 11.04.2019 Accepted: 11.04.2019
Citation:
V. V. Lundin, A. V. Sakharov, E. E. Zavarin, D. A. Zakgeim, E. Yu. Lundina, P. N. Brunkov, A. F. Tsatsul'nikov, “Insulating GaN epilayers co-doped with iron and carbon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 36–39; Tech. Phys. Lett., 45:7 (2019), 723–726
Linking options:
https://www.mathnet.ru/eng/pjtf5379 https://www.mathnet.ru/eng/pjtf/v45/i14/p36
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Abstract page: | 36 | Full-text PDF : | 22 |
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