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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 45, Issue 14, Pages 36–39
DOI: https://doi.org/10.21883/PJTF.2019.14.48022.17738 (Mi pjtf5379) 		 
This article is cited in 4 scientific papers (total in 4 papers)

Insulating GaN epilayers co-doped with iron and carbon

V. V. Lundina, A. V. Sakharova, E. E. Zavarina, D. A. Zakgeima, E. Yu. Lundinaa, P. N. Brunkova, A. F. Tsatsul'nikovb

a Ioffe Institute, St. Petersburg
b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
Full-text PDF (346 kB) Citations (4)
DOI: https://doi.org/10.21883/PJTF.2019.14.48022.17738
Abstract: The morphology and electrical properties of doped semi-insulating gallium nitride (GaN) epilayers have been studied. It was found that doping-induced improvement of the insulating properties of GaN epilayers with increased level of doping with carbon or iron is limited by the accompanying deterioration of surface morphology. The character of impurity-related morphology development is different for the two dopants. It is established that the co-doping with carbon and iron allows planarity of the GaN surface to be retained along with a significant improvement of insulating properties of epilayers.
Keywords: high-electron-mobility transistor, HEMT, semi-insulating gallium nitride, leak current, co-doping.
Received: 20.02.2019
Revised: 11.04.2019
Accepted: 11.04.2019
English version:
Technical Physics Letters, 2019, Volume 45, Issue 7, Pages 723–726
DOI: https://doi.org/10.1134/S106378501907023X
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Lundin, A. V. Sakharov, E. E. Zavarin, D. A. Zakgeim, E. Yu. Lundina, P. N. Brunkov, A. F. Tsatsul'nikov, “Insulating GaN epilayers co-doped with iron and carbon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:14 (2019), 36–39; Tech. Phys. Lett., 45:7 (2019), 723–726
Citation in format AMSBIB
\Bibitem{LunSakZav19}
\by V.~V.~Lundin, A.~V.~Sakharov, E.~E.~Zavarin, D.~A.~Zakgeim, E.~Yu.~Lundina, P.~N.~Brunkov, A.~F.~Tsatsul'nikov
\paper Insulating GaN epilayers co-doped with iron and carbon
\jour Pisma v Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 45
\issue 14
\pages 36--39
\mathnet{http://mi.mathnet.ru/pjtf5379}
\crossref{https://doi.org/10.21883/PJTF.2019.14.48022.17738}
\elib{https://elibrary.ru/item.asp?id=41131131}
\transl
\jour Tech. Phys. Lett.
\yr 2019
\vol 45
\issue 7
\pages 723--726
\crossref{https://doi.org/10.1134/S106378501907023X}
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    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Pisma v Zhurnal Tekhnicheskoi Fiziki Pisma v Zhurnal Tekhnicheskoi Fiziki
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