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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 9, Pages 1263–1269
(Mi phts6373)
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This article is cited in 1 scientific paper (total in 1 paper)
Manufacturing, processing, testing of materials and structures
Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
A. F. Tsatsul'nikovab, V. V. Lundinab, A. V. Sakharovab, E. E. Zavarinab, S. O. Usovab, A. E. Nikolaevab, M. A. Yagovkinaa, V. M. Ustinovab, N. A. Cherkashinc a Ioffe Institute, St. Petersburg
b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
c CEMES-CNRS – Université de Toulouse,
Toulouse, France
Abstract:
The epitaxial growth of InAlN layers and GaN/AlN/InAlN heterostructures for HEMTs in growth systems with horizontal reactors of the sizes 1 $\times$ 2", 3 $\times$ 2" и 6 $\times$ 2" is investigated. Studies of the structural properties of the grown InAlN layers and electrophysical parameters of the GaN/AlN/InAlN heterostructures show that the optimal quality of epitaxial growth is attained upon a compromise between the growth conditions for InGaN and AlGaN. A comparison of the epitaxial growth in different reactors shows that optimal conditions are realized in small-scale reactors which make possible the suppression of parasitic reactions in the gas phase. In addition, the size of the reactor should be sufficient to provide highly homogeneous heterostructure parameters over area for the subsequent fabrication of devices. The optimal compositions and thicknesses of the InAlN layer for attaining the highest conductance in GaN/AlN/InAlN transistor heterostructures.
Received: 29.02.2016 Accepted: 09.03.2016
Citation:
A. F. Tsatsul'nikov, V. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, M. A. Yagovkina, V. M. Ustinov, N. A. Cherkashin, “Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1263–1269; Semiconductors, 50:9 (2016), 1241–1247
Linking options:
https://www.mathnet.ru/eng/phts6373 https://www.mathnet.ru/eng/phts/v50/i9/p1263
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