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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 10, Pages 85–91
(Mi pjtf6420)
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This article is cited in 5 scientific papers (total in 5 papers)
Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source
V. V. Lundin, E. E. Zavarin, P. N. Brunkov, M. A. Yagovkina, A. V. Sakharov, M. A. Sinicin, B. Ya. Ber, D. Yu. Kazantsev, A. F. Tsatsul'nikov Ioffe Institute, St. Petersburg
Abstract:
The influence of propane present in a reactor at various stages of GaN growth by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates on the character of epitaxial process and the properties of epilayers has been studied. Doped GaN epilayers with carbon concentration 5 $\times$ 10$^{18}$ cm$^{-3}$ characterized by high crystalline perfection, an atomically smooth surface, and electric breakdown voltage above 500 V at a doped layer thickness of 4 $\mu$m have been obtained.
Received: 01.12.2015
Citation:
V. V. Lundin, E. E. Zavarin, P. N. Brunkov, M. A. Yagovkina, A. V. Sakharov, M. A. Sinicin, B. Ya. Ber, D. Yu. Kazantsev, A. F. Tsatsul'nikov, “Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:10 (2016), 85–91; Tech. Phys. Lett., 42:5 (2016), 539–542
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https://www.mathnet.ru/eng/pjtf6420 https://www.mathnet.ru/eng/pjtf/v42/i10/p85
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Abstract page: | 28 | Full-text PDF : | 11 |
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