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This article is cited in 1 scientific paper (total in 1 paper)
The effect of the method by which a high-resistivity GaN buffer layer is formed on properties of InAlN/GaN and AlGaN/GaN heterostructures with 2D electron gas
V. V. Lundina, A. V. Sakharova, E. E. Zavarina, D. A. Zakgeima, A. E. Nikolaeva, P. N. Brunkova, M. A. Yagovkinaa, A. F. Tsatsul'nikovb a Ioffe Institute, St. Petersburg
b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
Abstract:
AlGaN/AlN/GaN and InAlN/AlN/GaN structures with 2D electron gas have been grown on sapphire substrates by metal-organic vapor-phase epitaxy. The suppression of the parasitic conductivity of buffer GaN layers was provided either by intentionally raising the density of edge dislocations or by doping with iron (GaN:Fe). It was shown that using GaN buffer layers with a better crystal perfection and more planar surface results in the electron mobility in the 2D channel for carriers becoming 1.2–1.5 times higher.
Received: 28.03.2018
Citation:
V. V. Lundin, A. V. Sakharov, E. E. Zavarin, D. A. Zakgeim, A. E. Nikolaev, P. N. Brunkov, M. A. Yagovkina, A. F. Tsatsul'nikov, “The effect of the method by which a high-resistivity GaN buffer layer is formed on properties of InAlN/GaN and AlGaN/GaN heterostructures with 2D electron gas”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 44:13 (2018), 51–58; Tech. Phys. Lett., 44:7 (2018), 577–580
Linking options:
https://www.mathnet.ru/eng/pjtf5763 https://www.mathnet.ru/eng/pjtf/v44/i13/p51
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