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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 2, Pages 245–249 (Mi phts6546)  
This article is cited in 23 scientific papers (total in 23 papers)

Semiconductor physics

Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation

V. G. Tikhomirovab, V. E. Zemlyakovbc, V. V. Volkovb, Ya. M. Parnesb, V. N. V’yuginovb, V. V. Lundinde, A. V. Sakharovde, E. E. Zavarined, A. F. Tsatsul'nikoved, N. A. Cherkashinf, M. N. Mizerovd, V. M. Ustinove

a Saint Petersburg Electrotechnical University "LETI"
b ZAO Svetlana-Elektronpribor, St. Petersburg
c National Research University of Electronic Technology
d Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
e Ioffe Institute, St. Petersburg
f CEMES-CNRS – Université de Toulouse, Toulouse, France
Full-text PDF (548 kB) Citations (23)
Abstract: The numerical simulation, and theoretical and experimental optimization of field-effect microwave high-electron-mobility transistors (HEMTs) based on GaN/AlN/AlGaN heterostructures are performed. The results of the study showed that the optimal thicknesses and compositions of the heterostructure layers, allowing high microwave power implementation, are in relatively narrow ranges. It is shown that numerical simulation can be efficiently applied to the development of microwave HEMTs, taking into account basic physical phenomena and features of actual device structures.
Keywords: Sapphire Substrate, Joint Stock Company, Specific Output Power, AlGaN Barrier Layer, Microwave Transistor.
Received: 11.06.2015
Accepted: 17.06.2015
English version:
Semiconductors, 2016, Volume 50, Issue 2, Pages 244–248
DOI: https://doi.org/10.1134/S1063782616020263
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. G. Tikhomirov, V. E. Zemlyakov, V. V. Volkov, Ya. M. Parnes, V. N. V’yuginov, V. V. Lundin, A. V. Sakharov, E. E. Zavarin, A. F. Tsatsul'nikov, N. A. Cherkashin, M. N. Mizerov, V. M. Ustinov, “Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation”, Fizika i Tekhnika Poluprovodnikov, 50:2 (2016), 245–249; Semiconductors, 50:2 (2016), 244–248
Citation in format AMSBIB
\Bibitem{TikZemVol16}
\by V.~G.~Tikhomirov, V.~E.~Zemlyakov, V.~V.~Volkov, Ya.~M.~Parnes, V.~N.~V’yuginov, V.~V.~Lundin, A.~V.~Sakharov, E.~E.~Zavarin, A.~F.~Tsatsul'nikov, N.~A.~Cherkashin, M.~N.~Mizerov, V.~M.~Ustinov
\paper Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2016
\vol 50
\issue 2
\pages 245--249
\mathnet{http://mi.mathnet.ru/phts6546}
\elib{https://elibrary.ru/item.asp?id=25668114}
\transl
\jour Semiconductors
\yr 2016
\vol 50
\issue 2
\pages 244--248
\crossref{https://doi.org/10.1134/S1063782616020263}
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    • This publication is cited in the following 23 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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