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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 1, Pages 101–104
DOI: https://doi.org/10.21883/FTP.2017.01.44003.8293 (Mi phts6265) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Manufacturing, processing, testing of materials and structures

InGaN/GaN light-emitting diode microwires of submillimeter length

V. V. Lundina, S. N. Rodina, A. V. Sakharova, E. Yu. Lundinaa, S. O. Usovb, Yu. M. Zadiranova, S. I. Troshkova, A. F. Tsatsul'nikovbc

a Ioffe Institute, St. Petersburg
b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Full-text PDF (368 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2017.01.44003.8293
Abstract: Microcrystalline wire-like InGaN/GaN light-emitting diodes designed as core–shell structures 400–600 $\mu$m in length are grown by metal–organic vapor-phase epitaxy on sapphire and silicon substrates. The technology of the titanium-nanolayer-induced ultrafast growth of nanowire and microwire crystals is used. As a current is passed through the microcrystals, an electroluminescence signal is observed in the blue–green spectral region.
Received: 25.04.2016
Accepted: 29.04.2016
English version:
Semiconductors, 2017, Volume 51, Issue 1, Pages 100–103
DOI: https://doi.org/10.1134/S1063782617010122
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. V. Lundin, S. N. Rodin, A. V. Sakharov, E. Yu. Lundina, S. O. Usov, Yu. M. Zadiranov, S. I. Troshkov, A. F. Tsatsul'nikov, “InGaN/GaN light-emitting diode microwires of submillimeter length”, Fizika i Tekhnika Poluprovodnikov, 51:1 (2017), 101–104; Semiconductors, 51:1 (2017), 100–103
Citation in format AMSBIB
\Bibitem{LunRodSak17}
\by V.~V.~Lundin, S.~N.~Rodin, A.~V.~Sakharov, E.~Yu.~Lundina, S.~O.~Usov, Yu.~M.~Zadiranov, S.~I.~Troshkov, A.~F.~Tsatsul'nikov
\paper InGaN/GaN light-emitting diode microwires of submillimeter length
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 1
\pages 101--104
\mathnet{http://mi.mathnet.ru/phts6265}
\crossref{https://doi.org/10.21883/FTP.2017.01.44003.8293}
\elib{https://elibrary.ru/item.asp?id=28969413}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 1
\pages 100--103
\crossref{https://doi.org/10.1134/S1063782617010122}
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  • https://www.mathnet.ru/eng/phts/v51/i1/p101
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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