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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
P. A. Dementev, E. V. Dementevā, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev, “Electronic structure of thermally oxidized tungsten”, Fizika Tverdogo Tela, 63:8 (2021), 1166–1171   ; Phys. Solid State, 63 (2021), 1153–1158 |
| 2. |
E. V. Ivanova, P. A. Dementev, M. V. Zamoryanskaya, D. A. Zakgeim, D. Yu. Panov, V. A. Spiridonov, A. V. Kremleva, M. A. Odnoblyudov, D. A. Bauman, A. E. Romanov, V. E. Bugrov, “Study of charge carrier traps in bulk crystal gallium oxide $\beta$-Ga$_{2}$O$_{3}$”, Fizika Tverdogo Tela, 63:4 (2021), 421–426 ; Phys. Solid State, 63:4 (2021), 544–549 |
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| 3. |
P. A. Dementev, E. V. Dementevā, T. V. L'vova, V. L. Berkovits, M. V. Lebedev, “Optical and electronic properties of passivated InP(001) surfaces”, Fizika i Tekhnika Poluprovodnikov, 55:8 (2021), 644–648 ; Semiconductors, 55:8 (2021), 667–671 |
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2020 |
| 4. |
P. A. Dementev, E. V. Ivanova, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev, “Electronic structure of an ultrathin molybdenum oxide film”, Fizika Tverdogo Tela, 62:10 (2020), 1618–1626 ; Phys. Solid State, 62:10 (2020), 1787–1795 |
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| 5. |
P. A. Dementev, E. V. Ivanova, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev, “Gold nanoparticles adsorbed on tungsten: effect of sodium atom deposition and heating”, Fizika Tverdogo Tela, 62:8 (2020), 1171–1178 ; Phys. Solid State, 62:8 (2020), 1317–1324 |
| 6. |
P. A. Dementev, E. V. Ivanova, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev, “Electronic structure of molybdenum oxide oxidized at different pressures”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1395 ; Semiconductors, 54:12 (2020), 1698–1701 |
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2019 |
| 7. |
P. A. Dementev, E. V. Ivanova, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev, “Electronic structure of molybdenum oxidized in air”, Fizika Tverdogo Tela, 61:11 (2019), 2024–2029 ; Phys. Solid State, 61:11 (2019), 1993–1998 |
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| 8. |
P. A. Dementev, E. V. Ivanova, M. V. Zamoryanskaya, “Traps in the nanocomposite layer of silicon-silicon dioxide and their influence on the luminescent properties”, Fizika Tverdogo Tela, 61:8 (2019), 1448–1454 ; Phys. Solid State, 61:8 (2019), 1394–1400 |
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| 9. |
S. P. Lebedev, I. S. Barash, I. A. Eliseyev, P. A. Dementev, A. A. Lebedev, P. V. Bulat, “Investigation of the hydrogen etching effect of the SiC surface on the formation of graphene films”, Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019), 1940–1946 ; Tech. Phys., 64:12 (2019), 1843–1849 |
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| 10. |
K. N. Orekhova, Yu. M. Serov, P. A. Dementev, E. V. Ivanova, V. A. Kravez, V. P. Usacheva, M. V. Zamoryanskaya, “Investigation of a contamination film formed by the electron beam irradiation”, Zhurnal Tekhnicheskoi Fiziki, 89:9 (2019), 1412–1419 ; Tech. Phys., 64:9 (2019), 1336–1342 |
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| 11. |
M. V. Lebedev, T. V. L'vova, A. L. Shakhmin, O. V. Rakhimova, P. A. Dementev, I. V. Sedova, “Development of the physicochemical properties of the GaSb(100) surface in ammonium sulfide solutions”, Fizika i Tekhnika Poluprovodnikov, 53:7 (2019), 908–916 ; Semiconductors, 53:7 (2019), 892–900 |
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| 12. |
L. N. Luk'yanova, I. V. Makarenko, O. A. Usov, P. A. Dementev, “Topological surface states of Dirac fermions in $n$-Bi$_{2}$Te$_{3-y}$Se$_{y}$ thermoelectrics”, Fizika i Tekhnika Poluprovodnikov, 53:5 (2019), 654–658 ; Semiconductors, 53:5 (2019), 647–651 |
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| 13. |
G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, A. V. Osipov, S. N. Timoshnev, “A new type of carbon nanostructure on a vicinal SiŅ(111)-8$^\circ$ surface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 45:5 (2019), 17–20 ; Tech. Phys. Lett., 45:3 (2019), 201–204 |
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2018 |
| 14. |
P. A. Dementev, M. S. Dunaevskii, L. B. Matyshkin, A. V. Nezhdanov, A. N. Smirnov, D. O. Filatov, “Study of CsPbBr$_{3}$ nanocrystals and their agglomerates by combined scanning probe microscopy and optical spectrometry”, Optics and Spectroscopy, 125:6 (2018), 752–757 ; Optics and Spectroscopy, 125:6 (2018), 858–863 |
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2016 |
| 15. |
G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, M. N. Lapushkin, A. V. Osipov, B. V. Senkovskiy, “The C 1$s$ core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4$^\circ$ layer and Cs/SiC/Si(111)-4$^\circ$ interface”, Fizika i Tekhnika Poluprovodnikov, 50:10 (2016), 1348–1352 ; Semiconductors, 50:10 (2016), 1327–1332 |
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| 16. |
Ya. A. Parkhomenko, P. A. Dementev, K. D. Moiseev, “Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 993–996 ; Semiconductors, 50:7 (2016), 976–979 |
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| 17. |
V. V. Romanov, P. A. Dementev, K. D. Moiseev, “Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 927–931 ; Semiconductors, 50:7 (2016), 910–914 |
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| 18. |
G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, M. N. Lapushkin, B. V. Senkovskiy, S. N. Timoshnev, “Induced surface states of the ultrathin Âā/3$C$-SiC(111) interface”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 465–469 ; Semiconductors, 50:4 (2016), 457–461 |
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| 19. |
G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, M. N. Lapushkin, A. V. Osipov, S. N. Timoshnev, “Photoemission studies of the vicinal SiC(100) 4$^\circ$ surface and the Cs/SiC(100) 4$^\circ$ interface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 42:23 (2016), 51–57 ; Tech. Phys. Lett., 42:12 (2016), 1145–1148 |
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2020 |
| 20. |
S. P. Lebedev, I. A. Eliseyev, V. N. Panteleev, P. A. Dementev, V. V. Shnitov, M. K. Rabchinskii, D. A. Smirnov, A. V. Zubov, A. A. Lebedev, “Comparative study of conventional and quasi-freestanding epitaxial graphenes grown on 4$H$-SiC substrate”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1383 ; Semiconductors, 54:12 (2020), 1657–1660 |
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