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Fizika Tverdogo Tela, 2021, Volume 63, Issue 4, Pages 421–426
DOI: https://doi.org/10.21883/FTT.2021.04.50705.236 (Mi ftt8140) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Semiconductors

Study of charge carrier traps in bulk crystal gallium oxide $\beta$-Ga$_{2}$O$_{3}$

E. V. Ivanovaa, P. A. Dementeva, M. V. Zamoryanskayaa, D. A. Zakgeimb, D. Yu. Panovb, V. A. Spiridonovb, A. V. Kremlevab, M. A. Odnoblyudovbc, D. A. Baumanb, A. E. Romanovab, V. E. Bugrovb

a Ioffe Institute, St. Petersburg, Russia
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics, St. Petersburg, Russia
c Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia
Full-text PDF (317 kB) Citations (2)
DOI: https://doi.org/10.21883/FTT.2021.04.50705.236
Abstract: $\beta$-Ga$_{2}$O$_{3}$ bulk crystals were grown by the Czochralski method and studied. It was shown that the localization of charge of both signs is observed in the sample on the basis of the dynamics of the absorbed current and cathodoluminescence. It was demonstrated that the localization of electrons leads to a significant decrease in the cathodoluminescence intensity.
Keywords: bulk gallium oxide, luminescence, charge carrier traps.
Funding agency Grant number
Russian Science Foundation 19-19-00686
This work was supported by the Russian Scientific Foundation, project no. 19-19-00686.
Received: 11.11.2020
Revised: 11.11.2020
Accepted: 07.12.2020
English version:
Physics of the Solid State, 2021, Volume 63, Issue 4, Pages 544–549
DOI: https://doi.org/10.1134/S1063783421040089
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: E. V. Ivanova, P. A. Dementev, M. V. Zamoryanskaya, D. A. Zakgeim, D. Yu. Panov, V. A. Spiridonov, A. V. Kremleva, M. A. Odnoblyudov, D. A. Bauman, A. E. Romanov, V. E. Bugrov, “Study of charge carrier traps in bulk crystal gallium oxide $\beta$-Ga$_{2}$O$_{3}$”, Fizika Tverdogo Tela, 63:4 (2021), 421–426; Phys. Solid State, 63:4 (2021), 544–549
Citation in format AMSBIB
\Bibitem{IvaDemZam21}
\by E.~V.~Ivanova, P.~A.~Dementev, M.~V.~Zamoryanskaya, D.~A.~Zakgeim, D.~Yu.~Panov, V.~A.~Spiridonov, A.~V.~Kremleva, M.~A.~Odnoblyudov, D.~A.~Bauman, A.~E.~Romanov, V.~E.~Bugrov
\paper Study of charge carrier traps in bulk crystal gallium oxide $\beta$-Ga$_{2}$O$_{3}$
\jour Fizika Tverdogo Tela
\yr 2021
\vol 63
\issue 4
\pages 421--426
\mathnet{http://mi.mathnet.ru/ftt8140}
\crossref{https://doi.org/10.21883/FTT.2021.04.50705.236}
\elib{https://elibrary.ru/item.asp?id=46345485}
\transl
\jour Phys. Solid State
\yr 2021
\vol 63
\issue 4
\pages 544--549
\crossref{https://doi.org/10.1134/S1063783421040089}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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