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This article is cited in 2 scientific papers (total in 2 papers)
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Study of charge carrier traps in bulk crystal gallium oxide $\beta$-Ga$_{2}$O$_{3}$
E. V. Ivanovaa, P. A. Dementeva, M. V. Zamoryanskayaa, D. A. Zakgeimb, D. Yu. Panovb, V. A. Spiridonovb, A. V. Kremlevab, M. A. Odnoblyudovbc, D. A. Baumanb, A. E. Romanovab, V. E. Bugrovb a Ioffe Institute, St. Petersburg, Russia
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics, St. Petersburg, Russia
c Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia
Abstract:
$\beta$-Ga$_{2}$O$_{3}$ bulk crystals were grown by the Czochralski method and studied. It was shown that the localization of charge of both signs is observed in the sample on the basis of the dynamics of the absorbed current and cathodoluminescence. It was demonstrated that the localization of electrons leads to a significant decrease in the cathodoluminescence intensity.
Keywords:
bulk gallium oxide, luminescence, charge carrier traps.
Received: 11.11.2020 Revised: 11.11.2020 Accepted: 07.12.2020
Citation:
E. V. Ivanova, P. A. Dementev, M. V. Zamoryanskaya, D. A. Zakgeim, D. Yu. Panov, V. A. Spiridonov, A. V. Kremleva, M. A. Odnoblyudov, D. A. Bauman, A. E. Romanov, V. E. Bugrov, “Study of charge carrier traps in bulk crystal gallium oxide $\beta$-Ga$_{2}$O$_{3}$”, Fizika Tverdogo Tela, 63:4 (2021), 421–426; Phys. Solid State, 63:4 (2021), 544–549
Linking options:
https://www.mathnet.ru/eng/ftt8140 https://www.mathnet.ru/eng/ftt/v63/i4/p421
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