E. V. Ivanova, P. A. Dementev, M. V. Zamoryanskaya, D. A. Zakgeim, D. Yu. Panov, V. A. Spiridonov, A. V. Kremleva, M. A. Odnoblyudov, D. A. Bauman, A. E. Romanov, V. E. Bugrov, “Study of charge carrier traps in bulk crystal gallium oxide $\beta$-Ga$_{2}$O$_{3}$”, Fizika Tverdogo Tela, 63:4 (2021), 421–426; Phys. Solid State, 63:4 (2021), 544

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Fizika Tverdogo Tela, 2021, Volume 63, Issue 4, Pages 421–426
DOI: https://doi.org/10.21883/FTT.2021.04.50705.236 (Mi ftt8140)

This article is cited in 2 scientific papers (total in 2 papers)

Semiconductors

Study of charge carrier traps in bulk crystal gallium oxide

$\beta$ -Ga

$_{2}$ O

$_{3}$

E. V. Ivanova^a, P. A. Dementev^a, M. V. Zamoryanskaya^a, D. A. Zakgeim^b, D. Yu. Panov^b, V. A. Spiridonov^b, A. V. Kremleva^b, M. A. Odnoblyudov^bc, D. A. Bauman^b, A. E. Romanov^ab, V. E. Bugrov^b

^a Ioffe Institute, St. Petersburg, Russia
^b St. Petersburg National Research University of Information Technologies, Mechanics and Optics, St. Petersburg, Russia
^c Peter the Great St. Petersburg Polytechnic University, St. Petersburg, Russia

Full-text PDF (317 kB) Citations (2)

DOI: https://doi.org/10.21883/FTT.2021.04.50705.236

Abstract:

$\beta$ -Ga

$_{2}$ O

$_{3}$ bulk crystals were grown by the Czochralski method and studied. It was shown that the localization of charge of both signs is observed in the sample on the basis of the dynamics of the absorbed current and cathodoluminescence. It was demonstrated that the localization of electrons leads to a significant decrease in the cathodoluminescence intensity.

Keywords: bulk gallium oxide, luminescence, charge carrier traps.

Funding agency	Grant number
Russian Science Foundation	19-19-00686
This work was supported by the Russian Scientific Foundation, project no. 19-19-00686.

Received: 11.11.2020
Revised: 11.11.2020
Accepted: 07.12.2020

English version:
Physics of the Solid State, 2021, Volume 63, Issue 4, Pages 544–549
DOI: https://doi.org/10.1134/S1063783421040089

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: E. V. Ivanova, P. A. Dementev, M. V. Zamoryanskaya, D. A. Zakgeim, D. Yu. Panov, V. A. Spiridonov, A. V. Kremleva, M. A. Odnoblyudov, D. A. Bauman, A. E. Romanov, V. E. Bugrov, “Study of charge carrier traps in bulk crystal gallium oxide

$\beta$ -Ga

$_{2}$ O

$_{3}$ ”, Fizika Tverdogo Tela, 63:4 (2021), 421–426; Phys. Solid State, 63:4 (2021), 544–549

Citation in format AMSBIB

\Bibitem{IvaDemZam21}

\by E.~V.~Ivanova, P.~A.~Dementev, M.~V.~Zamoryanskaya, D.~A.~Zakgeim, D.~Yu.~Panov, V.~A.~Spiridonov, A.~V.~Kremleva, M.~A.~Odnoblyudov, D.~A.~Bauman, A.~E.~Romanov, V.~E.~Bugrov

\paper Study of charge carrier traps in bulk crystal gallium oxide $\beta$-Ga$_{2}$O$_{3}$

\jour Fizika Tverdogo Tela

\yr 2021

\vol 63

\issue 4

\pages 421--426

\mathnet{http://mi.mathnet.ru/ftt8140}

\crossref{https://doi.org/10.21883/FTT.2021.04.50705.236}

\elib{https://elibrary.ru/item.asp?id=46345485}

\transl

\jour Phys. Solid State

\yr 2021

\vol 63

\issue 4

\pages 544--549

\crossref{https://doi.org/10.1134/S1063783421040089}

Linking options:

https://www.mathnet.ru/eng/ftt8140

https://www.mathnet.ru/eng/ftt/v63/i4/p421

This publication is cited in the following 2 articles:

Ekaterina V. Dementeva, Peter A. Dementev, Maria A. Yagovkina, Maria V. Zamoryanskaya, “Determination of Type and Concentration of Traps in Nanoscale-Thick HfO2 Films Applicable for Gate Dielectric Stacks”, ACS Appl. Nano Mater., 6:18 (2023), 16212
E V Dementeva, P A Dementev, A V Kremleva, D Y Panov, A E Romanov, V E Bugrov, M V Zamoryanskaya, “Influence of the aluminum content on the luminescent and electronic properties of β-Ga2O3”, J. Phys.: Conf. Ser., 2103:1 (2021), 012167

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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