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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 7, Pages 993–996
(Mi phts6426)
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This article is cited in 5 scientific papers (total in 5 papers)
Manufacturing, processing, testing of materials and structures
Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy
Ya. A. Parkhomenko, P. A. Dementev, K. D. Moiseev Ioffe Institute, St. Petersburg
Abstract:
The first results of the liquid-phase epitaxial growth of quantum dots in the InSb/GaSb system and atomic-force microscopy data on the structural characteristics of the quantum dots are reported. It is shown that the surface density, shape, and size of nanoislands depend on the deposition temperature and the chemical properties of the matrix surface. Arrays of InSb quantum dots on GaSb (001) substrates are produced in the temperature range $T$ = 450–465$^\circ$C. The average dimensions of the quantum dots correspond to a height of $h$ = 3 nm and a base dimension of $D$ = 30 nm; the surface density is 3 $\times$ 10$^9$ cm$^{-2}$.
Received: 29.12.2015 Accepted: 18.01.2016
Citation:
Ya. A. Parkhomenko, P. A. Dementev, K. D. Moiseev, “Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxy”, Fizika i Tekhnika Poluprovodnikov, 50:7 (2016), 993–996; Semiconductors, 50:7 (2016), 976–979
Linking options:
https://www.mathnet.ru/eng/phts6426 https://www.mathnet.ru/eng/phts/v50/i7/p993
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Abstract page: | 27 | Full-text PDF : | 8 |
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