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Zhurnal Tekhnicheskoi Fiziki, 2019, Volume 89, Issue 12, Pages 1940–1946
DOI: https://doi.org/10.21883/JTF.2019.12.48495.217-19 (Mi jtf5443) 		 
This article is cited in 2 scientific papers (total in 2 papers)

Physics of nanostructures

Investigation of the hydrogen etching effect of the SiC surface on the formation of graphene films

S. P. Lebedeva, I. S. Barasha, I. A. Eliseyeva, P. A. Dementeva, A. A. Lebedevab, P. V. Bulatc

a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University "LETI"
c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
Full-text PDF (2501 kB) Citations (2)
DOI: https://doi.org/10.21883/JTF.2019.12.48495.217-19
Abstract: We have studied the effect of temperature and etching duration of the 4$H$-SiC (0001) surface in hydrogen on the structural perfection of graphene films grown by thermal destruction. Several technological modes have been identified that enable etching of the substrate without changing the stoichiometric composition of the surface. It has been demonstrated that pregrowth etching in hydrogen at $T$ = 1600$^\circ$C with a duration of 1 min makes it possible to obtain a more uniform and structurally perfect graphene than etching at $T$ = 1300$^\circ$C with a 30 min duration.
Keywords: graphene, silicon carbide, raman spectroscopy, atomic force microscopy.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 14.575.21.0148
The study was supported by the Ministry of Science and Education of the Russian Federation (Agreement no. 14.575.21.0148, unique project no. RFMEFI57517X0148).
Received: 25.05.2019
Revised: 25.05.2019
Accepted: 10.06.2019
English version:
Technical Physics, 2019, Volume 64, Issue 12, Pages 1843–1849
DOI: https://doi.org/10.1134/S1063784219120144
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: S. P. Lebedev, I. S. Barash, I. A. Eliseyev, P. A. Dementev, A. A. Lebedev, P. V. Bulat, “Investigation of the hydrogen etching effect of the SiC surface on the formation of graphene films”, Zhurnal Tekhnicheskoi Fiziki, 89:12 (2019), 1940–1946; Tech. Phys., 64:12 (2019), 1843–1849
Citation in format AMSBIB
\Bibitem{LebBarEli19}
\by S.~P.~Lebedev, I.~S.~Barash, I.~A.~Eliseyev, P.~A.~Dementev, A.~A.~Lebedev, P.~V.~Bulat
\paper Investigation of the hydrogen etching effect of the SiC surface on the formation of graphene films
\jour Zhurnal Tekhnicheskoi Fiziki
\yr 2019
\vol 89
\issue 12
\pages 1940--1946
\mathnet{http://mi.mathnet.ru/jtf5443}
\crossref{https://doi.org/10.21883/JTF.2019.12.48495.217-19}
\elib{https://elibrary.ru/item.asp?id=41848245}
\transl
\jour Tech. Phys.
\yr 2019
\vol 64
\issue 12
\pages 1843--1849
\crossref{https://doi.org/10.1134/S1063784219120144}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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