Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growth

Indium-antimonide quantum dots (7–9 $\times$ 10$^9$ cm$^2$) are produced on an InAs(001) substrate by metal-organic vapor-phase epitaxy at a temperature of $T$ = 440$^\circ$C. Epitaxial deposition occurred simultaneously onto an InAs binary matrix and an InAsSbP quaternary alloy matrix layer lattice-matched to the InAs substrate in terms of the lattice parameter. Transformation of the quantum-dot shape and size is studied in relation to the chemical composition of the working matrix surface, onto which the quantum dots are deposited. The use of a multicomponent layer makes it possible to control the lattice parameter of the matrix and the strains produced in the system during the formation of self-assembled quantum dots.