G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, M. N. Lapushkin, B. V. Senkovskiy, S. N. Timoshnev, “Induced surface states of the ultrathin Ва/3$C$-SiC(111) interface”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 465–469; Semiconductors, 50:4 (2016), 457

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Fizika i Tekhnika Poluprovodnikov, 2016, Volume 50, Issue 4, Pages 465–469 (Mi phts6487)

This article is cited in 2 scientific papers (total in 2 papers)

Surface, interfaces, thin films

Induced surface states of the ultrathin Ва/3

C

$C$ -SiC(111) interface

G. V. Benemanskaya^ab, P. A. Dementev^ab, S. A. Kukushkin^bc, M. N. Lapushkin^ab, B. V. Senkovskiy^d, S. N. Timoshnev^be

^a Ioffe Institute, St. Petersburg
^b Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
^c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^d Helmholtz-Zentrum Berlin fur Materialien und Energie, Elektronenspeicherring BESSY II, Berlin, Germany
^e Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg

Full-text PDF (531 kB) Citations (2)

Abstract: The electronic properties of the Ba/3

C

$C$ -SiC(111) nanointerface are for the first time studied by photoelectron spectroscopy with the use of synchrotron radiation in the energy range 80–450 eV. The experiments are performed in situ in ultrahigh vacuum for ultrathin Ba coatings on 3

C

$C$ -SiC(111) samples grown by a new method of substituting substrate atoms. It is found that the adsorption of Ba brings about the appearance of induced surface states with the binding energies 1.9, 6.2, and 7.5 eV. Evolution of the surface states and the spectra of the Si 2

p

$p$ and C 1

s

$s$ core levels shows that the Ba/3

C

$C$ -SiC(111) interface is formed due to charge transfer from Ba adatoms to surface Si atoms and underlying C atoms.

Keywords: Core Level, Photoemission Spectrum, Valence Band Region, Dilatation Dipole, Induce Surface State.

Received: 29.09.2015
Accepted: 07.10.2015

English version:
Semiconductors, 2016, Volume 50, Issue 4, Pages 457–461
DOI: https://doi.org/10.1134/S1063782616040072

Bibliographic databases:

Document Type: Article

Language: Russian

Citation: G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, M. N. Lapushkin, B. V. Senkovskiy, S. N. Timoshnev, “Induced surface states of the ultrathin Ва/3

C

$C$ -SiC(111) interface”, Fizika i Tekhnika Poluprovodnikov, 50:4 (2016), 465–469; Semiconductors, 50:4 (2016), 457–461

Citation in format AMSBIB

\Bibitem{BenDemKuk16}

\by G.~V.~Benemanskaya, P.~A.~Dementev, S.~A.~Kukushkin, M.~N.~Lapushkin, B.~V.~Senkovskiy, S.~N.~Timoshnev

\paper Induced surface states of the ultrathin Ва/3$C$-SiC(111) interface

\jour Fizika i Tekhnika Poluprovodnikov

\yr 2016

\vol 50

\issue 4

\pages 465--469

\mathnet{http://mi.mathnet.ru/phts6487}

\elib{https://elibrary.ru/item.asp?id=25668244}

\transl

\jour Semiconductors

\yr 2016

\vol 50

\issue 4

\pages 457--461

\crossref{https://doi.org/10.1134/S1063782616040072}

Linking options:

https://www.mathnet.ru/eng/phts6487

https://www.mathnet.ru/eng/phts/v50/i4/p465

This publication is cited in the following 2 articles:

G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, M. N. Lapushkin, A. V. Osipov, S. N. Timoshnev, “Photoemission studies of the vicinal SiC(100) 4 $^\circ$ surface and the Cs/SiC(100) 4 $^\circ$ interface”, Tech. Phys. Lett., 42:12 (2016), 1145–1148
G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, M. N. Lapushkin, A. V. Osipov, B. V. Senkovskiy, “The C 1 $s$ core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4 $^\circ$ layer and Cs/SiC/Si(111)-4 $^\circ$ interface”, Semiconductors, 50:10 (2016), 1327–1332

Citing articles in Google Scholar: Russian citations, English citations
Related articles in Google Scholar: Russian articles, English articles

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