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Fizika i Tekhnika Poluprovodnikov, 2020, Volume 54, Issue 12, Page 1395 (Mi phts6694)  
This article is cited in 2 scientific papers (total in 2 papers)

NANOSTRUCTURES : PHYSICS AND TECHNOLOGY 28th International Symposium (Minsk, Republic of Belarus, September, 2020)
Nanostructure Characterization

Electronic structure of molybdenum oxide oxidized at different pressures

P. A. Dementeva, E. V. Ivanovaa, M. N. Lapushkina, D. A. Smirnovb, S. N. Timoshnevc

a Ioffe Institute, 194021 St. Petersburg, 194021 Russia
b Institut für Festkörper- und Materialphysik, Technische Universität Dresden, 01062 Dresden, Germany
c Alferov University, 194021 St. Petersburg, 194021 Russia
Full-text PDF (26 kB) Citations (2)
Abstract: Electronic structure of molybdenum oxides obtained by the oxidation of molybdenum at an oxygen pressure of 1 Torr (thin film) and air (thick film) was studied. It was shown that a thick oxide film is formed from MoO$_3$ oxide, and a thin film from a mixture of MoO$_3$ and MoO$_2$ oxides, which is reflected in the form of valence band spectra. Oxygen on the surface belongs both in molybdenum oxide and in the hydroxyl group, which is associated with dissociative adsorption of water during the oxidation of molybdenum in air for a thick film.
Keywords: molybdenum oxide, oxidation, valence band, photoelectron spectroscopy.
Funding agency Grant number
Russian Foundation for Basic Research 20‑02‑00370
The study was carried out with the financial support of the Russian Foundation for Basic Research in the framework of the scientific project no. 20‑02‑00370.
Received: 23.06.2020
Revised: 23.07.2020
Accepted: 27.07.2020
English version:
Semiconductors, 2020, Volume 54, Issue 12, Pages 1698–1701
DOI: https://doi.org/10.1134/S1063782620120040
Document Type: Article
Language: English
Citation: P. A. Dementev, E. V. Ivanova, M. N. Lapushkin, D. A. Smirnov, S. N. Timoshnev, “Electronic structure of molybdenum oxide oxidized at different pressures”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1395; Semiconductors, 54:12 (2020), 1698–1701
Citation in format AMSBIB
\Bibitem{DemIvaLap20}
\by P.~A.~Dementev, E.~V.~Ivanova, M.~N.~Lapushkin, D.~A.~Smirnov, S.~N.~Timoshnev
\paper Electronic structure of molybdenum oxide oxidized at different pressures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2020
\vol 54
\issue 12
\pages 1395
\mathnet{http://mi.mathnet.ru/phts6694}
\transl
\jour Semiconductors
\yr 2020
\vol 54
\issue 12
\pages 1698--1701
\crossref{https://doi.org/10.1134/S1063782620120040}
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    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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