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Fizika Tverdogo Tela, 2019, Volume 61, Issue 8, Pages 1448–1454
DOI: https://doi.org/10.21883/FTT.2019.08.47968.454 (Mi ftt8723) 		 
This article is cited in 8 scientific papers (total in 8 papers)

Dielectrics

Traps in the nanocomposite layer of silicon-silicon dioxide and their influence on the luminescent properties

P. A. Dementev, E. V. Ivanova, M. V. Zamoryanskaya

Ioffe Institute, St. Petersburg
Full-text PDF (717 kB) Citations (8)
DOI: https://doi.org/10.21883/FTT.2019.08.47968.454
Abstract: The traps in thermal films of silicon dioxide and silicon dioxide with a nanocomposite layer on the surface were investigated by Kelvin-probe microscopy and cathode luminescence. In the layers, both electron traps and hole traps are observed. The effect of the charge state of electron traps on the luminescent properties of films is demonstrated. It is shown that in the presence of a nanocomposite layer in silicon dioxide films, the number of electron traps increases, but their activation energy remains close to the activation energy of traps in pure silicon dioxide, which suggests that the nature of the traps in such layers is similar.
Keywords: traps of electrons, traps of holes, silicon nanoclusters, the luminescence.
Received: 15.04.2019
Revised: 15.04.2019
Accepted: 16.04.2019
English version:
Physics of the Solid State, 2019, Volume 61, Issue 8, Pages 1394–1400
DOI: https://doi.org/10.1134/S1063783419080110
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: P. A. Dementev, E. V. Ivanova, M. V. Zamoryanskaya, “Traps in the nanocomposite layer of silicon-silicon dioxide and their influence on the luminescent properties”, Fizika Tverdogo Tela, 61:8 (2019), 1448–1454; Phys. Solid State, 61:8 (2019), 1394–1400
Citation in format AMSBIB
\Bibitem{DemIvaZam19}
\by P.~A.~Dementev, E.~V.~Ivanova, M.~V.~Zamoryanskaya
\paper Traps in the nanocomposite layer of silicon-silicon dioxide and their influence on the luminescent properties
\jour Fizika Tverdogo Tela
\yr 2019
\vol 61
\issue 8
\pages 1448--1454
\mathnet{http://mi.mathnet.ru/ftt8723}
\crossref{https://doi.org/10.21883/FTT.2019.08.47968.454}
\elib{https://elibrary.ru/item.asp?id=41130109}
\transl
\jour Phys. Solid State
\yr 2019
\vol 61
\issue 8
\pages 1394--1400
\crossref{https://doi.org/10.1134/S1063783419080110}
Linking options:
  • https://www.mathnet.ru/eng/ftt8723
  • https://www.mathnet.ru/eng/ftt/v61/i8/p1448
    • This publication is cited in the following 8 articles:
    1. V.A. Kravets, E.V. Dementeva, E.V. Popova, B.E. Burakov, M.V. Zamoryanskaya, “Synthesis, optical and cathodoluminescent properties of borosilicate glass doped with Eu3+”, Journal of Non-Crystalline Solids, 619 (2023), 122558  crossref
    2. Ekaterina V. Dementeva, Peter A. Dementev, Maria A. Yagovkina, Maria V. Zamoryanskaya, “Determination of Type and Concentration of Traps in Nanoscale-Thick HfO2 Films Applicable for Gate Dielectric Stacks”, ACS Appl. Nano Mater., 6:18 (2023), 16212  crossref
    3. P. A. Dementev, E. V. Dementevа, T. V. L'vova, V. L. Berkovits, M. V. Lebedev, “Optical and electronic properties of passivated InP(001) surfaces”, Semiconductors, 55:8 (2021), 667–671  mathnet  mathnet  crossref  crossref
    4. E. V. Ivanova, P. A. Dementev, M. V. Zamoryanskaya, D. A. Zakgeim, D. Yu. Panov, V. A. Spiridonov, A. V. Kremleva, M. A. Odnoblyudov, D. A. Bauman, A. E. Romanov, V. E. Bugrov, “Study of charge carrier traps in bulk crystal gallium oxide $\beta$-Ga$_{2}$O$_{3}$”, Phys. Solid State, 63:4 (2021), 544–549  mathnet  mathnet  crossref  crossref
    5. P A Dementev, E V Dementeva, “Kelvin-probe microscopy as a technique of estimation of the charge traps saturation time”, J. Phys.: Conf. Ser., 2103:1 (2021), 012067  crossref
    6. E V Dementeva, P A Dementev, A V Kremleva, D Y Panov, A E Romanov, V E Bugrov, M V Zamoryanskaya, “Influence of the aluminum content on the luminescent and electronic properties of β-Ga2O3”, J. Phys.: Conf. Ser., 2103:1 (2021), 012167  crossref
    7. P. S. Vergeles, Yu. O. Kulanchikov, E. B. Yakimov, “Charging Effects in Al-SiO2-p-Si Structures After Low-Energy Electron Beam Irradiation”, Journal of Elec Materi, 49:9 (2020), 5178  crossref
    8. E V Ivanova, P A Dementev, T V Lvova, M V Lebedev, “Effect of passivation on the n-InP optical and electronic properties”, J. Phys.: Conf. Ser., 1697:1 (2020), 012061  crossref
    Citing articles in Google Scholar: Russian citations, English citations
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