Traps in the nanocomposite layer of silicon-silicon dioxide and their influence on the luminescent properties

The traps in thermal films of silicon dioxide and silicon dioxide with a nanocomposite layer on the surface were investigated by Kelvin-probe microscopy and cathode luminescence. In the layers, both electron traps and hole traps are observed. The effect of the charge state of electron traps on the luminescent properties of films is demonstrated. It is shown that in the presence of a nanocomposite layer in silicon dioxide films, the number of electron traps increases, but their activation energy remains close to the activation energy of traps in pure silicon dioxide, which suggests that the nature of the traps in such layers is similar.