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Publications in Math-Net.Ru |
Citations |
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2021 |
| 1. |
D. S. Abramkin, M. O. Petrushkov, E. A. Emelyanov, A. V. Nenashev, M. Yu. Yesin, A. V. Vasev, M. A. Putyato, D. B. Bogomolov, A. K. Gutakovskii, V. V. Preobrazhenskii, “Formation of InAs/GaP heterostructures with quantum wells on silicon substrates by molecular beam epitaxy”, Fizika i Tekhnika Poluprovodnikov, 55:2 (2021), 139–146   ; Semiconductors, 55:2 (2021), 194–201 |
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2020 |
| 2. |
M. O. Petrushkov, D. S. Abramkin, E. A. Emelyanov, M. A. Putyato, A. V. Vasev, I. D. Loshkarev, M. Yu. Yesin, O. S. Komkov, D. D. Firsov, V. V. Preobrazhenskii, “Effect of the crystallographic orientation of GaSb films on their structural properties during MBE heteroepitaxy on vicinal Si(001) substrates”, Fizika i Tekhnika Poluprovodnikov, 54:12 (2020), 1289–1295 ; Semiconductors, 54:12 (2020), 1548–1554 |
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2019 |
| 3. |
D. S. Abramkin, M. O. Petrushkov, M. A. Putyato, B. R. Semyagin, E. A. Emelyanov, V. V. Preobrazhenskii, A. K. Gutakovskii, T. S. Shamirzaev, “GaAs/GaP quantum-well heterostructures grown on Si substrates”, Fizika i Tekhnika Poluprovodnikov, 53:9 (2019), 1167–1171 ; Semiconductors, 53:9 (2019), 1143–1147 |
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| 4. |
D. S. Abramkin, T. S. Shamirzaev, “Type-I indirect-gap semiconductor heterostructures on (110) substrates”, Fizika i Tekhnika Poluprovodnikov, 53:5 (2019), 710–717 ; Semiconductors, 53:5 (2019), 703–710 |
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2018 |
| 5. |
D. S. Abramkin, M. O. Petrushkov, M. A. Putyato, B. R. Semyagin, T. S. Shamirzaev, “Heterostructures with InAs/AlAs quantum wells and quantum dots grown on GaAs/Si hybrid substrates”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1373–1379 ; Semiconductors, 52:11 (2018), 1484–1490 |
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| 6. |
D. S. Abramkin, A. K. Bakarov, A. K. Gutakovskii, T. S. Shamirzaev, “Spinodal decomposition in InSb/AlAs heterostructures”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1280–1285 ; Semiconductors, 52:11 (2018), 1392–1397 |
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2017 |
| 7. |
V. E. Nikiforov, D. S. Abramkin, T. S. Shamirzaev, “Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1565–1568 ; Semiconductors, 51:11 (2017), 1513–1516 |
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| 8. |
D. S. Abramkin, A. K. Bakarov, M. A. Putyato, E. A. Emelyanov, D. A. Kolotovkina, A. K. Gutakovskii, T. S. Shamirzaev, “Formation of low-dimensional structures in the InSb/AlAs heterosystem”, Fizika i Tekhnika Poluprovodnikov, 51:9 (2017), 1282–1288 ; Semiconductors, 51:9 (2017), 1233–1239 |
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2016 |
| 9. |
D. S. Abramkin, K. M. Rumynin, A. K. Bakarov, D. A. Kolotovkina, A. K. Gutakovskii, T. S. Shamirzaev, “Quantum dots formed in InSb/AlAs and AlSb/AlAs heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 103:11 (2016), 785–791 ; JETP Letters, 103:11 (2016), 692–698   |
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2014 |
| 10. |
N. S. Volkova, A. P. Gorshkov, D. O. Filatov, D. S. Abramkin, “Emission of photoexcited charge carriers from InAs/GaAs quantum dots grown by gas-phase epitaxy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:3 (2014), 175–180 ; JETP Letters, 100:3 (2014), 156–161 |
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| 11. |
D. S. Abramkin, V. T. Shamirzaev, M. A. Putyato, A. K. Gutakovskii, T. S. Shamirzaev, “Coexistence of type-I and type-II band alignment in Ga(Sb,P)/GaP
heterostructures with pseudomorphic self-assembled quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 99:2 (2014), 81–86 ; JETP Letters, 99:2 (2014), 76–81 |
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2012 |
| 12. |
T. S. Shamirzaev, D. S. Abramkin, A. K. Gutakovskii, M. A. Putyato, “Novel self-assembled quantum dots in the GaSb/AlAs heterosystem”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:10 (2012), 601–603 ; JETP Letters, 95:10 (2012), 534–536 |
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