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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2012, Volume 95, Issue 10, Pages 601–603 (Mi jetpl2561)  
This article is cited in 12 scientific papers (total in 12 papers)

CONDENSED MATTER

Novel self-assembled quantum dots in the GaSb/AlAs heterosystem

T. S. Shamirzaev, D. S. Abramkin, A. K. Gutakovskii, M. A. Putyato

A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, Novosibirsk
Full-text PDF (352 kB) Citations (12)
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Abstract: Novel self-assembled quantum dots (QDs) in the GaSb/AlAs heterosystem were obtained and studied by means of transmission electron microscopy, steady-state and transient photoluminescence. A strong intermixing of both III and V group materials results in the fabrication of quaternary alloy QDs in the AlAs matrix. The QDs have atypical energy structure: band alignment of type I with the lowest electronic state at the indirect X minimum of the conduction band.
Received: 09.04.2012
English version:
Journal of Experimental and Theoretical Physics Letters, 2012, Volume 95, Issue 10, Pages 534–536
DOI: https://doi.org/10.1134/S0021364012100104
Bibliographic databases:
Document Type: Article
Language: English
Citation: T. S. Shamirzaev, D. S. Abramkin, A. K. Gutakovskii, M. A. Putyato, “Novel self-assembled quantum dots in the GaSb/AlAs heterosystem”, Pis'ma v Zh. Èksper. Teoret. Fiz., 95:10 (2012), 601–603; JETP Letters, 95:10 (2012), 534–536
Citation in format AMSBIB
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    • This publication is cited in the following 12 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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