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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2016, Volume 103, Issue 11, Pages 785–791
DOI: https://doi.org/10.7868/S0370274X16110060
(Mi jetpl4954)
 

This article is cited in 15 scientific papers (total in 15 papers)

CONDENSED MATTER

Quantum dots formed in InSb/AlAs and AlSb/AlAs heterostructures

D. S. Abramkinab, K. M. Rumyninab, A. K. Bakarovb, D. A. Kolotovkinaab, A. K. Gutakovskiiab, T. S. Shamirzaevabc

a Novosibirsk State University
b Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
c Ural Federal University
References:
Abstract: The crystal structure of new self-assembled InSb/AlAs and AlSb/AlAs quantum dots grown by molecularbeam epitaxy has been investigated by transmission electron microscopy. The theoretical calculations of the energy spectrum of the quantum dots have been supplemented by the experimental data on the steady-state and time-resolved photoluminescence spectroscopy. Deposition of 1.5 ML of InSb or AlSb on the AlAs surface carried out in the regime of atomic-layer epitaxy leads to the formation of pseudomorphically strained quantum dots composed of InAlSbAs and AlSbAs alloys, respectively. The quantum dots can have the type-I and type-II energy spectra depending on the composition of the alloy. The ground hole state in the quantum dot belongs to the heavy-hole band and the localization energy of holes is much higher than that of electrons. The ground electron state in the type-I quantum dots belongs to the indirect $X_{XY}$ valley of the conduction band of the alloy. The ground electron state in the type-II quantum dots belongs to the indirect $X$ valley of the conduction band of the AlAs matrix.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 02.A03.21.0006
Russian Foundation for Basic Research 16-32-60015_мол_а_дк
16-02-00242_а
16-29-03034_офи_м
14-02-00033_а
Russian Science Foundation 14-22-00143
Received: 25.03.2016
Revised: 15.04.2016
English version:
Journal of Experimental and Theoretical Physics Letters, 2016, Volume 103, Issue 11, Pages 692–698
DOI: https://doi.org/10.1134/S0021364016110023
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. S. Abramkin, K. M. Rumynin, A. K. Bakarov, D. A. Kolotovkina, A. K. Gutakovskii, T. S. Shamirzaev, “Quantum dots formed in InSb/AlAs and AlSb/AlAs heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 103:11 (2016), 785–791; JETP Letters, 103:11 (2016), 692–698
Citation in format AMSBIB
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\paper Quantum dots formed in InSb/AlAs and AlSb/AlAs heterostructures
\jour Pis'ma v Zh. \`Eksper. Teoret. Fiz.
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\vol 103
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  • This publication is cited in the following 15 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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