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This article is cited in 15 scientific papers (total in 15 papers)
CONDENSED MATTER
Quantum dots formed in InSb/AlAs and AlSb/AlAs heterostructures
D. S. Abramkinab, K. M. Rumyninab, A. K. Bakarovb, D. A. Kolotovkinaab, A. K. Gutakovskiiab, T. S. Shamirzaevabc a Novosibirsk State University
b Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences
c Ural Federal University
Abstract:
The crystal structure of new self-assembled InSb/AlAs and AlSb/AlAs quantum dots grown by molecularbeam epitaxy has been investigated by transmission electron microscopy. The theoretical calculations of the energy spectrum of the quantum dots have been supplemented by the experimental data on the steady-state and time-resolved photoluminescence spectroscopy. Deposition of 1.5 ML of InSb or AlSb on the AlAs surface carried out in the regime of atomic-layer epitaxy leads to the formation of pseudomorphically strained quantum dots composed of InAlSbAs and AlSbAs alloys, respectively. The quantum dots can have the type-I and type-II energy spectra depending on the composition of the alloy. The ground hole state in the quantum dot belongs to the heavy-hole band and the localization energy of holes is much higher than that of electrons. The ground electron state in the type-I quantum dots belongs to the indirect $X_{XY}$ valley of the conduction band of the alloy. The ground electron state in the type-II quantum dots belongs to the indirect $X$ valley of the conduction band of the AlAs matrix.
Received: 25.03.2016 Revised: 15.04.2016
Citation:
D. S. Abramkin, K. M. Rumynin, A. K. Bakarov, D. A. Kolotovkina, A. K. Gutakovskii, T. S. Shamirzaev, “Quantum dots formed in InSb/AlAs and AlSb/AlAs heterostructures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 103:11 (2016), 785–791; JETP Letters, 103:11 (2016), 692–698
Linking options:
https://www.mathnet.ru/eng/jetpl4954 https://www.mathnet.ru/eng/jetpl/v103/i11/p785
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Abstract page: | 174 | Full-text PDF : | 45 | References: | 41 | First page: | 9 |
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