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This article is cited in 8 scientific papers (total in 8 papers)
CONDENSED MATTER
Coexistence of type-I and type-II band alignment in Ga(Sb,P)/GaP
heterostructures with pseudomorphic self-assembled quantum dots
D. S. Abramkina, V. T. Shamirzaevb, M. A. Putyatoa, A. K. Gutakovskiia, T. S. Shamirzaevac a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State Technical University
c Novosibirsk State University
Abstract:
Band alignment of heterostructures with pseudomorphic
GaSb$_{1-x}$P$_{x}$/GaP self-assembled quantum dots (SAQDs) lying
on wetting layer was studied. Coexistence of type-I and type-II
band alignment was found within the same heterostructure. Wetting
layer has band alignment of type-I with the lowest electronic
state belonging to the X$_{XY}$ valley of GaSb$_{1-x}$P$_{x}$
conduction band, in contrast to SAQDs, which have band alignment
of type-II, independently of the ternary alloy composition $x$. It
is shown that type-I – type-II transition is a result of GaP
matrix deformation around the SAQD.
Received: 08.11.2013
Citation:
D. S. Abramkin, V. T. Shamirzaev, M. A. Putyato, A. K. Gutakovskii, T. S. Shamirzaev, “Coexistence of type-I and type-II band alignment in Ga(Sb,P)/GaP
heterostructures with pseudomorphic self-assembled quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 99:2 (2014), 81–86; JETP Letters, 99:2 (2014), 76–81
Linking options:
https://www.mathnet.ru/eng/jetpl3639 https://www.mathnet.ru/eng/jetpl/v99/i2/p81
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Abstract page: | 156 | Full-text PDF : | 42 | References: | 31 | First page: | 6 |
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