Abstract:
Band alignment of heterostructures with pseudomorphic
GaSb1−xPx/GaP self-assembled quantum dots (SAQDs) lying
on wetting layer was studied. Coexistence of type-I and type-II
band alignment was found within the same heterostructure. Wetting
layer has band alignment of type-I with the lowest electronic
state belonging to the XXY valley of GaSb1−xPx
conduction band, in contrast to SAQDs, which have band alignment
of type-II, independently of the ternary alloy composition x. It
is shown that type-I – type-II transition is a result of GaP
matrix deformation around the SAQD.
Citation:
D. S. Abramkin, V. T. Shamirzaev, M. A. Putyato, A. K. Gutakovskii, T. S. Shamirzaev, “Coexistence of type-I and type-II band alignment in Ga(Sb,P)/GaP
heterostructures with pseudomorphic self-assembled quantum dots”, Pis'ma v Zh. Èksper. Teoret. Fiz., 99:2 (2014), 81–86; JETP Letters, 99:2 (2014), 76–81