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Fizika i Tekhnika Poluprovodnikov, 2019, Volume 53, Issue 5, Pages 710–717
DOI: https://doi.org/10.21883/FTP.2019.05.47569.9018 (Mi phts5525) 		 
This article is cited in 5 scientific papers (total in 5 papers)

Semiconductor structures, low-dimensional systems, quantum phenomena

Type-I indirect-gap semiconductor heterostructures on (110) substrates

D. S. Abramkinab, T. S. Shamirzaevabc

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Ural Federal University, Yekaterinburg, Russia
Full-text PDF (243 kB) Citations (5)
DOI: https://doi.org/10.21883/FTP.2019.05.47569.9018
Abstract: Type-I indirect-gap heterostructures are convenient objects for studying the spin dynamics of localized excitons, which are difficult to investigate in heterostructures of other types. It is shown that structures with such an energy spectrum can be formed from III–V binary compounds on substrates with the (110) orientation. The effect of the strain distribution and conduction-band structure in quasimomentum space on the energy spectrum of electronic states in the heterostructures is discussed.
Funding agency Grant number
Ministry of Education and Science of the Russian Federation 02.A03.21.0006
Russian Foundation for Basic Research 16-32-60015 мол_а_дк
19-02-00098
19-52-12001
Received: 07.11.2018
Revised: 10.12.2018
Accepted: 17.12.2018
English version:
Semiconductors, 2019, Volume 53, Issue 5, Pages 703–710
DOI: https://doi.org/10.1134/S1063782619050026
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. S. Abramkin, T. S. Shamirzaev, “Type-I indirect-gap semiconductor heterostructures on (110) substrates”, Fizika i Tekhnika Poluprovodnikov, 53:5 (2019), 710–717; Semiconductors, 53:5 (2019), 703–710
Citation in format AMSBIB
\Bibitem{AbrSha19}
\by D.~S.~Abramkin, T.~S.~Shamirzaev
\paper Type-I indirect-gap semiconductor heterostructures on (110) substrates
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2019
\vol 53
\issue 5
\pages 710--717
\mathnet{http://mi.mathnet.ru/phts5525}
\crossref{https://doi.org/10.21883/FTP.2019.05.47569.9018}
\elib{https://elibrary.ru/item.asp?id=37644663}
\transl
\jour Semiconductors
\yr 2019
\vol 53
\issue 5
\pages 703--710
\crossref{https://doi.org/10.1134/S1063782619050026}
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  • https://www.mathnet.ru/eng/phts/v53/i5/p710
    • This publication is cited in the following 5 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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