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Pis'ma v Zhurnal Èksperimental'noi i Teoreticheskoi Fiziki, 2014, Volume 100, Issue 3, Pages 175–180
DOI: https://doi.org/10.7868/S0370274X1415003X (Mi jetpl3792) 		 
This article is cited in 11 scientific papers (total in 11 papers)

CONDENSED MATTER

Emission of photoexcited charge carriers from InAs/GaAs quantum dots grown by gas-phase epitaxy

N. S. Volkovaa, A. P. Gorshkova, D. O. Filatovb, D. S. Abramkinc

a N. I. Lobachevski State University of Nizhni Novgorod
b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
c Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
Full-text PDF (405 kB) Citations (11)
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DOI: https://doi.org/10.7868/S0370274X1415003X
Abstract: A model describing the emission of photoexcited electrons and holes from an array of InAs quantum dots into the GaAs matrix is suggested. The analytical expression obtained for the emission efficiency takes into account the thermal emission of charge carriers into the GaAs matrix and two-dimensional states of the InAs wetting layer, tunneling and thermally activated tunneling escape, and electron transitions between the quantum-confinement levels in the conduction band of InAs. The temperature dependences of the photosensitivity in the regions of the ground-state and first excited-state optical transitions in InAs/GaAs quantum dots grown by gas-phase epitaxy are investigated experimentally. A number of quantum dot parameters are determined by fitting the results of a theoretical calculation to the experimental data. Good agreement between the theoretical and experimental results is obtained in this way.
Received: 19.06.2014
English version:
Journal of Experimental and Theoretical Physics Letters, 2014, Volume 100, Issue 3, Pages 156–161
DOI: https://doi.org/10.1134/S0021364014150144
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. S. Volkova, A. P. Gorshkov, D. O. Filatov, D. S. Abramkin, “Emission of photoexcited charge carriers from InAs/GaAs quantum dots grown by gas-phase epitaxy”, Pis'ma v Zh. Èksper. Teoret. Fiz., 100:3 (2014), 175–180; JETP Letters, 100:3 (2014), 156–161
Citation in format AMSBIB
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    • This publication is cited in the following 11 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Письма в Журнал экспериментальной и теоретической физики Pis'ma v Zhurnal Иksperimental'noi i Teoreticheskoi Fiziki
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    References:35
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