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Fizika i Tekhnika Poluprovodnikov, 2017, Volume 51, Issue 11, Pages 1565–1568
DOI: https://doi.org/10.21883/FTP.2017.11.45112.26 (Mi phts6009) 		 
This article is cited in 4 scientific papers (total in 4 papers)

XXI International Symposium ''Nanophysics And Nanoelectronics'', Nizhny Novgorod, March 13-16, 2017

Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures

V. E. Nikiforova, D. S. Abramkinab, T. S. Shamirzaevabc

a Novosibirsk State University
b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
c Ural Federal University, Ekaterinburg
Full-text PDF (649 kB) Citations (4)
DOI: https://doi.org/10.21883/FTP.2017.11.45112.26
Abstract: It is necessary to protect the surface of AlAs-based heterostructures from oxidation using a GaAs cap layer because of the high reactivity of aluminum. Thus, the surface region of these heterostructures always contains a GaAs/AlAs heterojunction. Here, it is demonstrated that, under nonresonant photoexcitation, the photoluminescence spectrum of AlAs-based heterostructures features a band associated with this heterojunction. The intensity of this band is determined by the thickness and doping type of the GaAs cap layer.
Received: 27.04.2017
English version:
Semiconductors, 2017, Volume 51, Issue 11, Pages 1513–1516
DOI: https://doi.org/10.1134/S1063782617110203
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: V. E. Nikiforov, D. S. Abramkin, T. S. Shamirzaev, “Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures”, Fizika i Tekhnika Poluprovodnikov, 51:11 (2017), 1565–1568; Semiconductors, 51:11 (2017), 1513–1516
Citation in format AMSBIB
\Bibitem{NikAbrSha17}
\by V.~E.~Nikiforov, D.~S.~Abramkin, T.~S.~Shamirzaev
\paper Luminescence of a near-surface GaAs/AlAs heterojunction in AlAs-based heterostructures
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2017
\vol 51
\issue 11
\pages 1565--1568
\mathnet{http://mi.mathnet.ru/phts6009}
\crossref{https://doi.org/10.21883/FTP.2017.11.45112.26}
\elib{https://elibrary.ru/item.asp?id=30546403}
\transl
\jour Semiconductors
\yr 2017
\vol 51
\issue 11
\pages 1513--1516
\crossref{https://doi.org/10.1134/S1063782617110203}
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  • https://www.mathnet.ru/eng/phts/v51/i11/p1565
    • This publication is cited in the following 4 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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