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Fizika i Tekhnika Poluprovodnikov, 2018, Volume 52, Issue 11, Pages 1373–1379
DOI: https://doi.org/10.21883/FTP.2018.11.46601.23 (Mi phts5698) 		 
This article is cited in 2 scientific papers (total in 2 papers)

XXII International symposium ''Nanophysics and Nanoelectronics'', Nizhny novgorod, March, 12-15, 2018

Heterostructures with InAs/AlAs quantum wells and quantum dots grown on GaAs/Si hybrid substrates

D. S. Abramkinab, M. O. Petrushkova, M. A. Putyatoa, B. R. Semyagina, T. S. Shamirzaevacb

a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
b Novosibirsk State University
c Ural Federal University, Ekaterinburg
Full-text PDF (604 kB) Citations (2)
DOI: https://doi.org/10.21883/FTP.2018.11.46601.23
Abstract: Heterostructures with InAs/AlAs quantum dots are grown on GaAs/Si hybrid substrates. The experimentally observed low-temperature (5–80 K) photoluminescence spectra of InAs/AlAs/GaAs/Si heterostructures exhibit bands defined by excitonic recombination in quantum dots and a wetting layer, i.e., a thin quantum well lying at the base of the array of quantum dots. Temperature quenching of the photoluminescence of quantum dots occurs due to the direct trapping of charge carriers at defects localized in the AlAs matrix, in the vicinity of the quantum dots.
Keywords: Hybrid Substrates, Heterostructures, Quantum Dots (QDs), AlAs Matrix, Excitation Power Density.
Funding agency Grant number
Russian Science Foundation 17-72-10038
Received: 25.04.2018
Accepted: 07.05.2018
English version:
Semiconductors, 2018, Volume 52, Issue 11, Pages 1484–1490
DOI: https://doi.org/10.1134/S1063782618110039
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: D. S. Abramkin, M. O. Petrushkov, M. A. Putyato, B. R. Semyagin, T. S. Shamirzaev, “Heterostructures with InAs/AlAs quantum wells and quantum dots grown on GaAs/Si hybrid substrates”, Fizika i Tekhnika Poluprovodnikov, 52:11 (2018), 1373–1379; Semiconductors, 52:11 (2018), 1484–1490
Citation in format AMSBIB
\Bibitem{AbrPetPut18}
\by D.~S.~Abramkin, M.~O.~Petrushkov, M.~A.~Putyato, B.~R.~Semyagin, T.~S.~Shamirzaev
\paper Heterostructures with InAs/AlAs quantum wells and quantum dots grown on GaAs/Si hybrid substrates
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2018
\vol 52
\issue 11
\pages 1373--1379
\mathnet{http://mi.mathnet.ru/phts5698}
\crossref{https://doi.org/10.21883/FTP.2018.11.46601.23}
\elib{https://elibrary.ru/item.asp?id=36903616}
\transl
\jour Semiconductors
\yr 2018
\vol 52
\issue 11
\pages 1484--1490
\crossref{https://doi.org/10.1134/S1063782618110039}
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  • https://www.mathnet.ru/eng/phts/v52/i11/p1373
    • This publication is cited in the following 2 articles:
    Citing articles in Google Scholar: Russian citations, English citations
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    		Fizika i Tekhnika Poluprovodnikov Fizika i Tekhnika Poluprovodnikov
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