|
|
|
Publications in Math-Net.Ru |
Citations |
|
2021 |
| 1. |
Zh. V. Smagina, V. A. Zinov'ev, M. V. Stepikhova, A. V. Peretokin, S. A. Dyakov, E. E. Rodyakina, A. V. Novikov, A. V. Dvurechenskii, “Dependence of luminescence properties of the ordered groups of epitaxially grown Ge(Si) nanoislands on the parameters of pit-patterned SOI substrate”, Fizika i Tekhnika Poluprovodnikov, 55:12 (2021), 1210–1215   |
2
|
| 2. |
N. V. Gaponenko, Yu. D. Kornilava, E. I. Lashkovskaya, V. D. Zhivulko, A. V. Mudryi, Yu. V. Radyush, B. A. Andreev, M. V. Stepikhova, A. N. Yablonskii, S. A. Gusev, R. Subasri, D. S. Reddy, “Radiative properties of up-conversion coatings formed on the basis of erbium-doped barium titanate xerogels”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 713–718 ; Semiconductors, 55:9 (2021), 735–740 |
7
|
|
2020 |
| 3. |
A. N. Yablonskii, A. V. Novikov, M. V. Stepikhova, S. M. Sergeev, N. A. Baidakova, M. V. Shaleev, Z. F. Krasil'nik, “Kinetics of the luminescence response of self-assembled Ge(Si) nanoislands embedded in two-dimensional photonic crystals”, Fizika i Tekhnika Poluprovodnikov, 54:10 (2020), 1150–1157 ; Semiconductors, 54:10 (2020), 1352–1359 |
2
|
| 4. |
D. V. Yurasov, A. V. Novikov, S. A. Dyakov, M. V. Stepikhova, A. N. Yablonskii, S. M. Sergeev, D. E. Utkin, Z. F. Krasil'nik, “Enhancement of the luminescence signal from self-assembled Ge(Si) nanoislands due to interaction with the modes of two-dimensional photonic crystals”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 822–829 ; Semiconductors, 54:8 (2020), 975–981 |
2
|
| 5. |
Zh. V. Smagina, A. V. Novikov, M. V. Stepikhova, V. A. Zinov'ev, E. E. Rodyakina, A. V. Nenashev, S. M. Sergeev, A. V. Peretokin, P. A. Kuchinskaya, M. V. Shaleev, S. A. Gusev, A. V. Dvurechenskii, “Luminescence of spatially ordered self-assembled solitary Ge(Si) nanoislands and their groups incorporated into photonic crystals”, Fizika i Tekhnika Poluprovodnikov, 54:8 (2020), 708–715 ; Semiconductors, 54:8 (2020), 853–859 |
6
|
|
2019 |
| 6. |
Zh. V. Smagina, V. A. Zinovyev, E. E. Rodyakina, B. I. Fomin, M. V. Stepikhova, A. N. Yablonskii, S. A. Gusev, A. V. Novikov, A. V. Dvurechenskii, “Ordered arrays of Ge(Si) quantum dots embedded in two-dimensional photonic crystals”, Fizika i Tekhnika Poluprovodnikov, 53:10 (2019), 1366–1371 ; Semiconductors, 53:10 (2019), 1329–1333 |
7
|
|
2018 |
| 7. |
Zh. V. Smagina, V. A. Zinovyev, G. K. Krivyakin, E. E. Rodyakina, P. A. Kuchinskaya, B. I. Fomin, A. N. Yablonskii, M. V. Stepikhova, A. V. Novikov, A. V. Dvurechenskii, “Study of the structural and emission properties of Ge(Si) quantum dots ordered on the Si(001) surface”, Fizika i Tekhnika Poluprovodnikov, 52:9 (2018), 1028–1033 ; Semiconductors, 52:9 (2018), 1150–1155 |
7
|
|
2017 |
| 8. |
N. Yu. Kirsanov, N. V. Latukhina, D. A. Lizunkova, G. A. Rogozhina, M. V. Stepikhova, “Multilayer photosensitive structures based on porous silicon and rare-earth-element compounds: Study of spectral characteristics”, Fizika i Tekhnika Poluprovodnikov, 51:3 (2017), 367–371 ; Semiconductors, 51:3 (2017), 353–356 |
6
|
|
2016 |
| 9. |
V. G. Shengurov, V. Yu. Chalkov, S. A. Denisov, S. A. Matveev, A. V. Nezhdanov, A. I. Mashin, D. O. Filatov, M. V. Stepikhova, Z. F. Krasil'nik, “Conditions of growth of high-quality relaxed Si$_{1-x}$Ge$_{x}$ layers with a high Ge content by the vapor-phase decomposition of monogermane on a sublimating Si hot wire”, Fizika i Tekhnika Poluprovodnikov, 50:9 (2016), 1270–1275 ; Semiconductors, 50:9 (2016), 1248–1253 |
1
|
| 10. |
P. G. Serafimovich, M. V. Stepikhova, N. L. Kazanskii, S. A. Gusev, A. V. Egorov, E. V. Skorokhodov, Z. F. Krasil'nik, “On a silicon-based photonic-crystal cavity for the near-IR region: Numerical simulation and formation technology”, Fizika i Tekhnika Poluprovodnikov, 50:8 (2016), 1133–1137 ; Semiconductors, 50:8 (2016), 1112–1116 |
6
|
| 11. |
A. P. Detochenko, S. A. Denisov, M. N. Drozdov, A. I. Mashin, V. A. Gavva, A. D. Bulanov, A. V. Nezhdanov, A. A. Ezhevskii, M. V. Stepikhova, V. Yu. Chalkov, V. N. Trushin, D. V. Shengurov, V. G. Shengurov, N. V. Abrosimov, H. Riemann, “Epitaxially grown monoisotopic Si, Ge, and Si$_{1-x}$Ge$_{x}$ alloy layers: production and some properties”, Fizika i Tekhnika Poluprovodnikov, 50:3 (2016), 350–353 ; Semiconductors, 50:3 (2016), 345–348 |
4
|
|
2005 |
| 12. |
M. V. Stepikhova, D. M. Zhigunov, V. G. Shengurov, V. Yu. Timoshenko, L. V. Krasil’nikova, V. Yu. Chalkov, S. P. Svetlov, O. A. Shalygina, P. K. Kashkarov, Z. F. Krasil'nik, “Population inversion of the energy levels of erbium ions induced by excitation transfer from the semiconductor matrix in Si-Ge based structures”, Pis'ma v Zh. Èksper. Teoret. Fiz., 81:10 (2005), 614–617 ; JETP Letters, 81:10 (2005), 494–497   |
12
|
|
| Organisations |
|
| |
|
|
Contact us: