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Fizika i Tekhnika Poluprovodnikov, 2021, Volume 55, Issue 9, Pages 713–718
DOI: https://doi.org/10.21883/FTP.2021.09.51282.09
(Mi phts4970)
 

This article is cited in 7 scientific papers (total in 7 papers)

XXV International Symposium "Nanophysics and Nanoelectronics", Nizhny Novgorod, March 9-12, 2021

Radiative properties of up-conversion coatings formed on the basis of erbium-doped barium titanate xerogels

N. V. Gaponenkoa, Yu. D. Kornilavaa, E. I. Lashkovskayaa, V. D. Zhivulkob, A. V. Mudryib, Yu. V. Radyushb, B. A. Andreevc, M. V. Stepikhovac, A. N. Yablonskiic, S. A. Gusevc, R. Subasrid, D. S. Reddyd

a Belarussian State University of Computer Science and Radioelectronic Engineering
b Scientific-Practical Materials Research Centre of NAS of Belarus
c Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhnii Novgorod
d Centre for Sol-Gel Coatings, International Advanced Research Centre for Powder Metallurgy and New Materials, 500005 Hyderabad, India
Full-text PDF (534 kB) Citations (7)
Abstract: The Stokes and anti-Stokes luminescence of erbium in sol–gel-derived barium-titanate xerogels (BaTiO$_3$ : Er) and BaTiO$_{3}$/SiO$_{2}$ multilayer structures based on these xerogels formed on silicon substrates is studied. It is shown that the up-conversion of erbium in barium-titanate xerogels obtained from erbium nitrate or acetate is observed at an erbium concentration of $>3$ at.%. The up-conversion of erbium is observed at an excitation wavelength of 980 nm and characterized by an intense band in the 520–560 nm range, corresponding to the $^{2}H_{11/2}\to{}^4I_{15/2}$ and $^{4}S_{3/2}\to{}^4I_{15/2}$ radiative transitions of the erbium ion, as well as the bands in the regions of 650 and 850 nm associated with the $^{4}F_{9/2}\to{}^4I_{15/2}$ и $^{4}I_{9/2}\to{}^4I_{15/2}$ transitions, respectively. Based on the obtained BaTiO$_{3}$ xerogels, multilayer BaTiO$_{3}$ : Er/SiO$_{2}$/Si structures are formed on silicon substrates, providing a significant, compared to single-layer BaTiO$_3$ : Er/Si structures, increase in the intensity of erbium luminescence at the wavelength of the main radiative transition (1540 nm). The prospects of developing up-conversion coatings based on erbium-doped barium titanate for practical applications are discussed.
Keywords: barium titanate, erbium, upconversion, luminescence, sol-gel method, multilayer structures.
Funding agency Grant number
Russian Foundation for Basic Research 20-52-00039 Бел_а
Belarusian Republican Foundation for Fundamental Research Х20Р-388
Department of Science and Technology, India INT/BLR/P-18/2016
The work was carried out under support of the collaborative grant of the Russian Foundation for Basic Research (RFBR) and the Belarusian Republican Foundation for Fundamental Research (BRFFR) (RFBR 20-52-00039 Bel_a, BRFFR Kh20R-388) and the grant of the Department of Science and Technology, India (INT/BLR/P-18/2016).
Received: 12.04.2021
Revised: 19.04.2021
Accepted: 19.04.2021
English version:
Semiconductors, 2021, Volume 55, Issue 9, Pages 735–740
DOI: https://doi.org/10.1134/S1063782621090062
Bibliographic databases:
Document Type: Article
Language: Russian
Citation: N. V. Gaponenko, Yu. D. Kornilava, E. I. Lashkovskaya, V. D. Zhivulko, A. V. Mudryi, Yu. V. Radyush, B. A. Andreev, M. V. Stepikhova, A. N. Yablonskii, S. A. Gusev, R. Subasri, D. S. Reddy, “Radiative properties of up-conversion coatings formed on the basis of erbium-doped barium titanate xerogels”, Fizika i Tekhnika Poluprovodnikov, 55:9 (2021), 713–718; Semiconductors, 55:9 (2021), 735–740
Citation in format AMSBIB
\Bibitem{GapKorLas21}
\by N.~V.~Gaponenko, Yu.~D.~Kornilava, E.~I.~Lashkovskaya, V.~D.~Zhivulko, A.~V.~Mudryi, Yu.~V.~Radyush, B.~A.~Andreev, M.~V.~Stepikhova, A.~N.~Yablonskii, S.~A.~Gusev, R.~Subasri, D.~S.~Reddy
\paper Radiative properties of up-conversion coatings formed on the basis of erbium-doped barium titanate xerogels
\jour Fizika i Tekhnika Poluprovodnikov
\yr 2021
\vol 55
\issue 9
\pages 713--718
\mathnet{http://mi.mathnet.ru/phts4970}
\crossref{https://doi.org/10.21883/FTP.2021.09.51282.09}
\elib{https://elibrary.ru/item.asp?id=46491072}
\transl
\jour Semiconductors
\yr 2021
\vol 55
\issue 9
\pages 735--740
\crossref{https://doi.org/10.1134/S1063782621090062}
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